Testing new chemistries for mask repair with focused ion beam gas assisted etching

Abstract

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Patterning of amorphous and polycrystalline Ni78B14Si8 with a focused-ion-beam

“…Furthermore, FIB can be used to optimise the resulting surface properties by varying the ion beam parameters and by utilising various gasassisted-etching (GAE) techniques [11,12]. The FIB processing of amorphous Ni-P systems has been studied for several years; however most of the research has been motivated by the nanoscale structural changes that the irradiated material undergoes to obtain oriented nano-sized crystals for high-density magnetic information storage [13][14][15][16][17].…”

A study of fused silica micro/nano patterning by focused-ion-beam

“…The reported results were very promising, in particular without any post-processing the transmission of the repaired regions was about 95% of that achievable with a blank mask. Additionally, in contrast to photolithography, the loss of mask transparency due to the Ga ion implantation is expected to be less important for the resolution of imprinted features by S-FIL TM [2][3][4]11]. Therefore, the qualities of the patterned templates, i.e.…”

“…By applying FIB technology, it is possible to eliminate many of the lithography steps required for EBL and pattern fused silica templates directly. More importantly, FIB can be used to optimise the resulting surface properties by varying the ion beam probe current and the ion beam fluence, and also by utilising various gas assisted etching (GAE) techniques [10,11]. A range of chemistries for mask repair by FIB GAE of Cr was studied including their transmission at 193 nm UV irradiation [11].…”

“…More importantly, FIB can be used to optimise the resulting surface properties by varying the ion beam probe current and the ion beam fluence, and also by utilising various gas assisted etching (GAE) techniques [10,11]. A range of chemistries for mask repair by FIB GAE of Cr was studied including their transmission at 193 nm UV irradiation [11]. The reported results were very promising, in particular without any post-processing the transmission of the repaired regions was about 95% of that achievable with a blank mask.…”

Chemically Enhanced Focused Ion Beam Selective Patterning of Titanium, Titanium Oxide and Nitride Thin Films

“…Reactive gases commonly used in a FIB GAE processes are, for example, XeF 2 for SiO 2 , Si 3 N 4 , and W etching, Cl 2 and I 2 for aluminum and silicon, O 2 for photoresists, H 2 O for diamond, Br 2 for chromium [6][7][8][9][10]. The ion beam causes a reaction between the adsorbed gas molecules and the substrate atoms, forming volatile compounds and thus an enhanced removal of material.…”