Focused ion beam fabrication of submicron gold structures

Blauner, Patricia G.; Ro, Jae-Sang; Butt, Y.; Melngailis, J.

doi:10.1116/1.584803

Cited by 72 publications

(29 citation statements)

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“…Such cross sections were measured for several relevant molecules. [17][18][19][20][21][22][23] The spatial distribution f͑r͒ is a convolution of the Gaussian incident beam distribution f͑r͒ ϰ exp͑−r 2 ͒ with a peak function for the emitted spectrum which can be roughly approximated by f͑r͒ ϰ exp͑−r͒. Full widths at half maximum ͑FWHM͒ of the emitted distributions range between ϳ0.1 nm ͑200 keV͒ 14 and 2 nm ͑1 keV͒.…”

Section: Theorymentioning

confidence: 99%

Resolution in focused electron- and ion-beam induced processing

Utke¹,

Friedli²,

Purrucker³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The key physical processes governing resolution of gas-assisted focused electron-beam and ion-beam induced deposition and etching are analyzed via an adsorption rate model. The authors quantify how the balance of molecule depletion and replenishment determines the resolution inside the locally irradiated area. Scaling laws are derived relating the resolution of the deposits to molecule dissociation, surface diffusion, adsorption, and desorption. Supporting results from deposition experiments with a copper metalorganic precursor gas on a silicon substrate are presented and discussed.

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Section: Theorymentioning

confidence: 99%

Resolution in focused electron- and ion-beam induced processing

Utke¹,

Friedli²,

Purrucker³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Auger electron spectroscopy (AES) was used to determine the chemical composition of the deposits. 4. RESULTS AND DISCUSSION Figure 2 shows the dependency of the deposited layer thickness on dose at various beam currents for the chamber system.…”

Section: Methodsmentioning

confidence: 97%

Focused ion-beam-assisted deposition of tungsten

1990

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ABSTRACFFormation of fine conductive layer patterns by focused ion beam ( FIB ) using tungsten hexacarbonyl [W(CO)6] has been carried out to study its deposition mechanism. The effects of beam current density on the deposition rate, using a chamber-type gas delivery system and a nozzle-type system has been investigated and compared. It is found that the amount of dependence of deposition yield on current density differs between the two systems. In addition, the difference in gas pressures of the two systems cause different compositions of the deposits. INTRODUCTIONFocused ion beam assisted deposition has gained a much attention because it enables rewiring and repairing of integrated circuits.1 A focused laser beam induced chemical reaction has also been utilized for these purposes.2 However, the application of laser beam to ULSI chips is thought to be impossible because of the difficulty in focusing the beam to a point less than 1 im in diameter.Electron beams have also been considered for IC repair because they cause decomposition of adsorbed molecules, which results in deposition.3 However, the reaction cross section for this process is smaller than that for the ion beam induced process.4 Therefore, ion beam induced deposition has the following advantages over laser beams and electron beams: the ability to be focused to a point well under 1 .tm in diameter, and a higher deposition rate than that of electron beam induced reaction. Another advantage is that an ion beam can be used for sputtering, and therefore, wire cutting and connection can be accomplished on submicron scale. These techniques can be invaluable tools, especially for the fabrication of application specified integrated circuits (ASIC) or wafer scale integrated circuits.However, the mechanism of the ion beam induced reaction is still not well understood. Carbon contamination which occurs during ion implantation5 and accumulation of carbon on the electron microscope samples6 are widely known phenomena that are similar to ion beam induced deposition. Some models have been proposed for these phenomena.5'7 The basic mechanism of the phenomena 62 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/22/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx is supposed to be the same for an ion beam and an electron beam; namely, the molecules adsorbed on the substrate are decomposed by the beam radiation resulting in the deposition of metal or carbon atoms on the surface. Therefore, beam induced deposition can be described as competition on the substrate surface between the adsorption of gas and the decomposition of gas. Usually the beam current density is very high, and the supply of gas molecules to the surface is supposed to determine the rate of deposition. In this work, we investigate the influence of current density upon the deposition yield and examine the validity of the simple model proposed by Scheuer et al.8 EXPERIMENTALA 16-kY two-lens FIB system with no mass filter was used in this experiment. A gallium-indium-tin te...

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“…Although the data are not shown, in most of the cases, the sputtering yield either levels off or decreases sometimes for ion energies higher than 100 keV, because implantation becomes the dominating factor in the interaction between the ions and the target at higher energies. 3 To gauge their reliability, the TRIM predictions are further compared to the experimental data reported by Blauner et al, 17 Pellerin et al, 18 Xu et al, 19 Santamore et al, 20 and Frey, Lehrer, and Ryssel. 21 As shown in Fig.…”

Section: A Sputtering Yield Predictionmentioning

confidence: 99%

Milling of submicron channels on gold layer using double charged arsenic ion beam

Tseng¹,

Insua²,

Park³

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The capability of using a focused ion beam (FIB) for milling of submicron channel structures on a gold layer is investigated. A double-charged arsenic (As2+) FIB is adopted to assess the effect of the dwell time on the final profiles of the milled structures. A single-pass milling, which creates relatively shallow microchannels, is conducted in order to estimate the corresponding milling yields. The condition to provide a uniform ion flux in milling is first studied. The procedure on conducting the milling experiment is then presented. The atomic force microscope (AFM) is applied for measuring the profiles of the milled channels. Based on the AFM measurements, the milling yields have been estimated and compared with the sputtering yields predicted by a more sophisticated numerical simulation. The milling yield for the relatively shallow microchannels presently considered has been discovered to be roughly equal to the predicted normal-incidence sputtering yield. Consistence has also been found as the present findings have been compared with other channel milling studies, which had used different ion beams and target materials. FIB milling has been shown to be an effective tool for making submicron channels in gold layers.

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Focused ion beam fabrication of submicron gold structures

Cited by 72 publications

References 0 publications

Resolution in focused electron- and ion-beam induced processing

Resolution in focused electron- and ion-beam induced processing

Focused ion-beam-assisted deposition of tungsten

Milling of submicron channels on gold layer using double charged arsenic ion beam

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