Five cadaveric ankles were used to determine the effects of prophylactic bracing and tape on resisting an inversion moment applied to the ankle. The ankles were tested in neutral flexion and 30 degrees of plantar flexion and with both low- and high-top shoes. Eight different strap-on braces were studied. High-top sneakers significantly increased the passive resistance to inversion afforded by all braces and tape. Many of the braces functioned to resist inversion at a level that was comparable with or exceeded the capability of freshly applied tape. This finding was independent of the type of footwear. Braces that were not as effective as freshly applied tape nevertheless retained the advantage over tape in that they could be easily readjusted and their effectiveness restored, whereas the quality of the support provided with tape deteriorated with usage.

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Neutron scattering has been used to study the critical behavior of the site-random Ising system, Mn Znl "Fz, for x =0.75 and 0.50. VA'th the x =0.75 sample, which is of particularly high quality, measurements were possible over nearly three decades, 4x 10 &~t~&2X10 ' both above aud below T~, the resulting exponents are v= v'=0. 715+0.035 and y =y'= 1.364+0.076, and the corresponding amplitude ratios are 0.69+0.02 and 2.45%0. 15, respectively. These agree well with values obtained in Fe"Znl "Fz for x =0.46 and 0.50 and with theoretical predictions for the random exchange Ising model. VA'th the x =0.5 sample, high-energy resolution scans were carried out in the critical region below Tz, ' these experiments indicate that the predicted elastic Lorentzian-squared scattering is too small in magnitude to be measured aud specifically that it does not affect the amplitude ratios given above.

The luminescence properties of cubic GaN films grown upon 3C‐SiC/Si (001) substrates by MOCVD were investigated. The spectra show luminescence peaks which are associated with donor bound exciton recombination and donor acceptor pair recombination. A reduced peak energy for the D0X emission compared with values reported in the literature suggests a tensile‐strain‐reduced bandgap of approximately 3.27 eV, which is consistent with the absorption edge in photoluminescence‐excitation spectroscopy. The presence of hexagonal material introduces a broad emission band at 3.40 eV with a FWHM of 190 meV, extending to energies up to 3.60 eV. The intensity of this emission scales linearly with excitation power, its peak energy and width remaining unchanged. This band is associated with an absorption edge below 3.70 eV and therefore is not caused by absorption into phase‐pure cubic or hexagonal GaN. The photoluminescence lifetimes measured across this band reduce from 0.40 to 0.20 ns with increasing emission energy. All these observations can be explained by considering a type‐II‐band alignment adjacent to stacking faults within the cubic GaN.

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