Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Alanis, Juan Arturo; Lysevych, Mykhaylo; Burgess, Timothy; Saxena, Dhruv; Mokkapati, Sudha; Skalsky, Stefan; Tang, Xiaoyan; Mitchell, P.W.; Walton, Alex S.; Tan, Hark Hoe; Jagadish, Chennupati; Parkinson, Patrick

doi:10.1021/acs.nanolett.8b04048

Cited by 25 publications

(54 citation statements)

References 64 publications

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“…We attribute this feature to a strong, higher-lying direct absorption in the barrier (HH → Γ) leading to high carrier densities, followed by efficient carrier transfer into the confined well states. This threshold is significantly lower than the previously reported room temperature lasing thresholds for near-infrared III-V NW lasers 20,22,41 .…”

Section: Excitation-energy-dependent Emissioncontrasting

confidence: 58%

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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

et al. 2020

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Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q-factors of 1250 ± 90 corresponding to end-facet reflectivities of R = 0.73 ± 0.02. By using optimised direct-indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasifour-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm −2 pulse −1) for III-V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.

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Section: Excitation-energy-dependent Emissioncontrasting

confidence: 58%

“…Excitation fluence-dependent PL characterisation was carried out on 270 isolated wires [20][21][22] , using a 620 nm sub-picosecond excitation pulse (details are provided in the Methods section). A typical measurement is shown in Fig.…”

Section: Large-scale Power-dependent μ-Pl Characterisationmentioning

confidence: 99%

Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

et al. 2020

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“…Furthermore, enhancing radiative efficiency instead of reducing surface recombination was demonstrated to be a suitable and convenient approach. By p‐type doping of GaAs with Zn, room‐temperature emission at ≈880 nm even in nonpassivated nanowires was enabled . Moreover, ≈900 nm lasing in nonpassivated InP nanowires was achieved by growing stacking‐fault‐free and taper‐free wires using selective‐area metal–organic vapor‐phase epitaxy .…”

Section: Spectral Tuning Of Nanowire Lasing Spectramentioning

confidence: 99%

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

Zapf

Sidiropoulos

Röder

2019

Advanced Optical Materials

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Technology Roadmap for Semiconductors -ITRS 2.0" follows this generalized approach by combining the schemes "More-than-Moore" and "More Moore." The first one wants to incorporate (nondigital) functionalities into devices and systems providing additional value in different ways, while the second scheme aims for a continued shrinking of the physical dimensions of electrical switches in order to reduce cost and increase their performance. [1] Thus, the "Morethan-Moore" scheme considers promising (nano)photonic components to play a key role either as lasers, waveguides, or photo detectors in system on a chip devices (SoC) and optical interconnects (OI). These approaches require optical devices/ coherent light sources with a nanoscaled footprint available by low cost fabrication methods.In parallel, after the development of the first laser, [2] the applications of lasers have been extended into many different scientific areas as well as in many aspects of industrial and public life such as material modification/analysis, spectroscopy, medicine, optics, etc. [3] Along with these important innovations, there has always been the strong aim to miniaturize the laser devices, [4] which partially goes along with the need for miniaturized lasers in SoCs and OIs. The successive miniaturization already had strong impact on technologies like optical communication and furthermore led to microdisk lasers, [5] vertical cavity surface emitting lasers, [6] and photonic crystal lasers [7] based on semiconductor materials. However, the fundamental research in the past decade focused on investigating, exploring, and developing nanoscaled coherent light sources with even smaller footprint that can be integrated in SoCs/OIs, as envisaged by "More-than-Moore." Therefore, semiconductor nanowirebased lasers belong to the heavily investigated model systems, as they can be synthesized cheaply and offer an exceptionally small footprint. The scope of this review is thus to report on recent developments of individual semiconductor nanowires as potential nanoscaled coherent light sources with promising spectral and temporal lasing characteristics, which both need to be fully understood and optimized in order to unleash the potential of semiconductor nanowire lasers for a huge amount of on-chip applications. Note that the terms nanowires, nanorods, and nanopillars are treated equally within this review.Semiconductor optoelectronics have contributed tremendously to various aspects of the technological progress in the past. Recently, they also stimulate research in nanophotonics seeking to overcome the inherent limitations of electronic integrated circuits and satisfy the growing demand for faster onchip communications. In particular, nanowire (NW) lasers generate coherent light at the nanoscale and meanwhile work consistently at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the NW material. The underlying physics of their electronic and photonic systems are also studied very recently, thus...

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“…Here we report on four of the most commonly used methods to transfer nanowires by investigating their effect on both geometry and optical performance using hundreds of single nanowire spectroscopic measurements for each method. 18,19 Using automated data acquisition techniques combined with a robust statistical analysis is essential to identify correlations that would otherwise be impossible to resolve from a smaller set of measurements. 20 Transfer methods used included a solution-based transfer by ultrasonication for 5 s and 100 s, a dry transfer by rubbing and PDMS stamping onto z-cut quartz substrates.…”

Section: Introductionmentioning

confidence: 99%

“…20 Transfer methods used included a solution-based transfer by ultrasonication for 5 s and 100 s, a dry transfer by rubbing and PDMS stamping onto z-cut quartz substrates. The nanowires used for this study are a p-doped GaAs core-only architecture grown by Au-assisted vapor liquid solid mechanism as reported by Burgess et al 8,19 We compare the impact of transfer method on nanowire length, lasing yield (dened as the fraction of nanowires tested which display lasing behaviour) and lasing threshold, and correlate it with end-facet quality imaged using Scanning Electron Microscopy (SEM). We nd that nanowires from sample transferred by 5 s ultrasound have the best lasing performance, with a median lasing threshold of 98 mJ cm À2 and a lasing yield of $72%, followed by PDMS with 104 mJ cm À2 and a reduced lasing yield of $60%.…”

Section: Introductionmentioning

confidence: 99%

Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization

et al. 2019

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Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Cited by 25 publications

References 64 publications

Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization

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