Lasers that use metallic cavities have emerged recently as a new class of light source [1][2][3] . Plasmonic lasers achieve optical confinement and feedback using surface plasmon polaritons (SPPs), quasiparticles of photons and electrons at metal-dielectric interfaces, which can be amplified by suitable optical gain media 4 . The high gain of inorganic crystalline semiconductors is typically necessary to overcome fast electron scattering in metals (~10 fs), which leaves plasmonic lasers with high parasitic cavity loss. Nevertheless, SPPs offer the capability to reduce optical mode sizes far below the scale of the vacuum wavelength 3,5-8 leading to compact lasers that can generate extremely focussed optical excitations on potentially ultrafast time scales 1,9 with applications in Raman sensing

We report the sintering behavior of nanocrystalline zinc oxide under external AC electric field between 0 and 160 V/cm. In situ acquisition of density by means of laser dilatometry, evaluation of specimen temperature, real‐time measurement of electric field and current help analyze this peculiar behavior. Field strength and blocking electrodes significantly affect densification and microstructure, which was evaluated in the vicinity of the flash event and for the fully sintered material. High current densities flow through the sample at high electric fields, entailing a sudden increment of the temperature estimated to several hundreds of K and an exaggerated grain growth. In contrast, low current density flows through the sample at lower electric fields, which guarantees normal grain growth and highest final density. Macroscopic photoluminescence measurements give insights into the development of the defect structure. Electric fields are expected to enhance defect mobility, explaining the high densification rates observed during the sintering process.

Direct growth of quasi-one-dimensional nano- and microstructures in desired places of complex shaped substrates using simple growth methods is highly demanded aspect for various applications. In this work, we have demonstrated direct integration of ZnO nano- and microneedles into Si trenches by a novel flame transport synthesis approach in a single fabrication step. Growth of partially and fully covered or filled trenches in Si substrate with ZnO nano- and microneedles has been investigated and is discussed here. Detailed microstructural studies revealed the evolution of the ZnO nano- and microneedles as well as their firm adhesion to the wall in the Si trenches. Micro-photoluminescence measurements at different locations along the length of needles confirmed the good crystalline quality and also the presence of whispering gallery mode resonances on the top of needles due to their hexagonal shape. Faceted ZnO nano- and microstructures are also very important candidates with regard to photocatalytic activity. First, photocatalytic measurements from the grown ZnO nano- and microneedles have shown strong degradation of methylene blue, which demonstrate that these structures can be of significant interest for photocatalysis and self-cleaning chromatography columns.

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The synthesis of CdS nanostructures (bands, wires, irregular structures) was investigated by systematic variation of temperature and gas pressure, to deduce a comprehensive growth phase diagram. The high quality nanowires were further investigated and show stoichiometric composition of CdS as well as a single-crystalline lattice without any evidence of extended defects. The luminescence of individual nanowires at low excitation shows a strong near band edge emission at 2.41 eV indicating a low point defect concentration. Sharp peaks evolve at higher laser power and finally dominate the luminescence spectrum. The power dependence of the spectrum clearly shows all the characteristics of amplified stimulated emission and lasing action in the nanowire cavity. A low threshold was determined as 10 kW cm(-2) for lasing at room temperature with a slope efficiency of 5-10% and a Q factor of up to 1200. The length and diameter relations necessary for lasing of individual nanowires was investigated.