Low threshold room-temperature lasing of CdS nanowires

Geburt, Sebastian; Thielmann, Andreas; Röder, Robert; Borschel, Christian; McDonnell, Amanda Louise; Kozlik, Michael; Kühnel, Julian; Sunter, Kristen A.; Capasso, Federico; Ronning, Carsten

doi:10.1088/0957-4484/23/36/365204

Cited by 51 publications

(76 citation statements)

References 35 publications

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“…This is further accompanied by a red-shift of the gain profile at the same pumping powers due to band gap renormalization effects in the EHP [28]. The red-shift of the gain profile, which in our case is achieved by changing the polarization from α = ± 90° to α = 0° and proven by the high polarization ratio for the low energy mode B, is usually obtained for an increase in pumping intensity under constant polarization [14,17].…”

Section: Resultssupporting

confidence: 51%

“…The power dependent measurements were fitted using a multimode laser model (compare [14]). This demonstrated the lasing ability of the NW with a threshold of approximately 40 kW/cm².…”

Section: Resultsmentioning

confidence: 99%

“…Any significant effect of the shape of the absorption profile can therefore be ruled out. Since laser oscillations are likely caused by the formation of an electron-hole plasma (EHP) at high pumping intensities in single CdS (and ZnO NWs as a comparable NW laser system) [14,16,27,17], the approximately 1.24 times higher absorption for parallel polarization supplies the semiconductor more efficiently with charge carriers. This is further accompanied by a red-shift of the gain profile at the same pumping powers due to band gap renormalization effects in the EHP [28].…”

Section: Resultsmentioning

confidence: 99%

“…Recent progress in nanophotonics [4] and plasmonic circuitry [5] emphasizes the need for nanoscale light sources [6]. Besides application of semiconductor nanowires as optoelectronic devices [7,8,9], the remarkable optical properties of single nanowires like strong localization of light [10] and efficient waveguiding [11,12] as well as laser oscillations under pulsed optical pumping were already demonstrated for a wide range of semiconductor materials with emission from the UV to the NIR [13,14,15]. Optical pumping of the semiconductor nanowire material enables inversion and high optical gain suitable even for continuous wave lasing [16].…”

Section: Introductionmentioning

confidence: 99%

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Polarization features of optically pumped CdS nanowire lasers

Röder¹,

Ploss²,

Kriesch³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract. High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while the nanowire emission was monitored in a 'head-on' measurement geometry. Highest pump-efficiency and most efficient absorption of the pump radiation are demonstrated for an incident electric field being polarized parallel to the nanowire axis. This polarization dependence was observed both above the lasing threshold and in the regime of amplified spontaneous emission. Measured Stokes parameters of the nanowire emission reveal that due to the onset of lasing the degree of polarization rapidly increases from approximately 15% to 85 %. Both, Stokes parameters and degree of polarization of the nanowire lasing emission are independent of the excitation polarization.

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Section: Resultssupporting

confidence: 51%

“…The power dependent measurements were fitted using a multimode laser model (compare [14]). This demonstrated the lasing ability of the NW with a threshold of approximately 40 kW/cm².…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Polarization features of optically pumped CdS nanowire lasers

Röder¹,

Ploss²,

Kriesch³

et al. 2014

J. Phys. D: Appl. Phys.

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“…7,8 Semiconductor nanowires grown by the vapor-liquid-solid (VLS) mechanism are particularly interesting for applications as light emitting diode (LED) 9 or nanolasers. 10,11 II-VI semiconductors doped with Mn or rare-earth elements are known to exhibit high quantum efficiencies of the internal 3d-or 4f-transitions and reduce substantially the contribution of surface-related nonradiative recombination, in nanomaterials. [12][13][14][15] For sophisticated applications in nanoscale devices high emission intensities are needed.…”

Section: Introductionmentioning

confidence: 99%

Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires

Kaiser

Gies

Geburt

et al. 2013

Journal of Applied Physics

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Zinc sulfide (ZnS) nanowires with a typical diameter of 100 to 300 nm have been doped with different concentrations of either Mn or Tb using ion implantation. Both systems show very efficient and long living intra-shell luminescence with strong non-exponential decay characteristics in the range of milliseconds. The time behavior of the corresponding luminescence is well described within a modified Förster model, taking into account the lower dimensionality of the nanowires in case of radiationless dipole-dipole energy transfer. The general applicability of this model for energy transfer processes in low dimensional systems will be shown as a function of concentration, temperature, excitation density as well as for measurements on the level of single nanowires.

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Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

Zapf

Sidiropoulos

Röder

2019

Advanced Optical Materials

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Technology Roadmap for Semiconductors -ITRS 2.0" follows this generalized approach by combining the schemes "More-than-Moore" and "More Moore." The first one wants to incorporate (nondigital) functionalities into devices and systems providing additional value in different ways, while the second scheme aims for a continued shrinking of the physical dimensions of electrical switches in order to reduce cost and increase their performance. [1] Thus, the "Morethan-Moore" scheme considers promising (nano)photonic components to play a key role either as lasers, waveguides, or photo detectors in system on a chip devices (SoC) and optical interconnects (OI). These approaches require optical devices/ coherent light sources with a nanoscaled footprint available by low cost fabrication methods.In parallel, after the development of the first laser, [2] the applications of lasers have been extended into many different scientific areas as well as in many aspects of industrial and public life such as material modification/analysis, spectroscopy, medicine, optics, etc. [3] Along with these important innovations, there has always been the strong aim to miniaturize the laser devices, [4] which partially goes along with the need for miniaturized lasers in SoCs and OIs. The successive miniaturization already had strong impact on technologies like optical communication and furthermore led to microdisk lasers, [5] vertical cavity surface emitting lasers, [6] and photonic crystal lasers [7] based on semiconductor materials. However, the fundamental research in the past decade focused on investigating, exploring, and developing nanoscaled coherent light sources with even smaller footprint that can be integrated in SoCs/OIs, as envisaged by "More-than-Moore." Therefore, semiconductor nanowirebased lasers belong to the heavily investigated model systems, as they can be synthesized cheaply and offer an exceptionally small footprint. The scope of this review is thus to report on recent developments of individual semiconductor nanowires as potential nanoscaled coherent light sources with promising spectral and temporal lasing characteristics, which both need to be fully understood and optimized in order to unleash the potential of semiconductor nanowire lasers for a huge amount of on-chip applications. Note that the terms nanowires, nanorods, and nanopillars are treated equally within this review.Semiconductor optoelectronics have contributed tremendously to various aspects of the technological progress in the past. Recently, they also stimulate research in nanophotonics seeking to overcome the inherent limitations of electronic integrated circuits and satisfy the growing demand for faster onchip communications. In particular, nanowire (NW) lasers generate coherent light at the nanoscale and meanwhile work consistently at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the NW material. The underlying physics of their electronic and photonic systems are also studied very recently, thus...

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Low threshold room-temperature lasing of CdS nanowires

Cited by 51 publications

References 35 publications

Polarization features of optically pumped CdS nanowire lasers

Polarization features of optically pumped CdS nanowire lasers

Luminescence and energy transfer processes in ensembles and single Mn or Tb doped ZnS nanowires

Tailoring Spectral and Temporal Properties of Semiconductor Nanowire Lasers

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