High-quality (Pb, La)(Ti, Zr)O3 films were grown on n-GaN. The film thickness ranged from 0.5 to 5 μm. The material was prepared by a chemical solution method with compositions of 8/65/35 and 0/52/48. The films grown on GaN buffered with a thin layer of indium in oxide were highly textured and exhibited excellent ferroelectric properties with Pr=20–26 μC/cm2. A large field-induced birefringence of 0.025 was measured in the film with a composition of 8/65/35 under a field strength of 2×105 V/cm.
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High quality barium titanate films were grown on (001)LaAlO3 and r-Al2O3 in a wide thickness range of 0.5-10 µtm by sol-gel technique. Significant improvement of the films' crystallinity and optical quality was observed if acetate precursors are used vs. alkoxide precursors, and in the presence of lead oxide. The material is transparent at 350-2000 nm, indicating the possibility of its application in light controlling devices at wavelengths used in optical communication: 1300 and 1500 nm. Maximum field induced relative phase shift of 0.22 radian was measured in the film with composition of Ba0.9Pb0.1TiO3 under a field strength of 3.106 V/cm.
Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3 in a thickness range of 0.3-5 [.proportional]m by a solgel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5.10−8 A/cm2.
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