Strong electro-optical (EO) anisotropy has been measured in (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 [(1−x)PMN–xPT] single crystalline films epitaxially grown on (100)-cut LaAlO3 substrate, through using an improved dynamic alternating-current ellipsometric null EO detection technique with high accuracy. Large quadratic EO coefficients, which can be as large as 1.38×10−16 (m/V)2 in 0.67PMN–0.33PT film, were obtained in all the used compositions when electric field was applied along {110} directions. The strong EO anisotropy has been explained according to the structural relationship between ferroelectric polarization, input light polarization, and the applied electric field.
A wavefront sensing technique is proposed based on the principle of aberration-mode filtering and detection. The mathematical foundation of the method is provided by a series of orthogonal and binary functions, for the optical aperture, derived from the Walsh series. It is shown that the expansion of a wavefront using these basis functions is explicitly related to the expansion of the optical field itself on the same basis. This permits the determination of the coefficients associated with the binary aberration modes through simple intensity measurements with the help of a phase-only spatial light modulator and a single-mode optical fiber. These coefficients can be independently acquired in sets that characterize wavefronts in various spatial resolutions. A numerical simulation and practical implementation of the technique are also discussed.
The structural and quadratic electro-optic properties in lead magnesium niobate titanate thin films have been systematically studied as a function of the fraction x of lead titanate. (110)-oriented, pyrochlore-free PMN–PT films with PT contents around morphotropic phase boundary compositions, which have a propagation loss as low as 3 dB/cm and a high electro-optical (EO) coefficient of 1.32×10−16 (m/V)2, have been fabricated on (1012)-cut sapphire substrates. The EO measurements show that the PMN–PT is a highly promising electro-optic material.
We report a birefringent bistability exhibited in ferroelectric thin films with a ferroelectric-semiconductor interface. Such birefringent bistability is observed in (Pb,La)(Zr,Ti)O3 (PLZT) thin films which are sandwiched between a platinum and a semiconducting indium-tin oxide (ITO) electrode. The magnitude of the birefringence between the two remanent states is approximately 0.9×10−3. The Pt/PLZT/ITO structure features a nonvolatile electro-optic memory operation, i.e., the switching between the two remanent birefringent states with bipolar electric pulses.
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