In-plane electro-optic anisotropy of (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 thin films grown on (100)-cut LaAlO3

Abstract

Strong electro-optical (EO) anisotropy has been measured in (1−x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 [(1−x)PMN–xPT] single crystalline films epitaxially grown on (100)-cut LaAlO3 substrate, through using an improved dynamic alternating-current ellipsometric null EO detection technique with high accuracy. Large quadratic EO coefficients, which can be as large as 1.38×10−16 (m/V)2 in 0.67PMN–0.33PT film, were obtained in all the used compositions when electric field was applied along {110} directions. The strong EO anisotropy has been explained according to the structural relationship between ferroelectric polarization, input light polarization, and the applied electric field.

Modeling of multilayer electrode performance in transverse electro-optic modulators

“…The following parameters of PMN-PT wafer are used: 13,14 Dielectric constants: ε r 1 =1 and ε r 2 =2260; EO coefficient: R=1.32e-16 (m/v) 2 ; Refractive index: n=2.5; Laser wavelength: λ =587.6 nm; Total EO wafer thickness of each modulator: t=100 μm. And Geometrical parameters of electrodes are given as: gap=10 μm, width=10 μm, height=3.0 μm.…”

Optical and electro-optic anisotropy of epitaxial Ba0.7Sr0.3TiO3 thin films

“…The polarization changes could originate from: ͑1͒ the magnitude variation of the relative displacement of the Ti 4+ with respect to O 2− , ͑2͒ the change of domain growth mechanism, and ͑3͒ the lattice distortion caused by the stain in perovskite structure. 5,10 Other factors, such as dielectric permittivity, may also be responsible for the orientation dependence of E-O effect in our tetragonal-distorted BST thin films. 22 Further investigation needs to be conducted in order to clarify the underlying physics of the E-O anisotropy in BST films.…”

“…1 Great efforts have been made to explore suitable ferroelectric oxide materials that have large E-O coefficient and can be epitaxially grown on low-refractive-index substrates. [2][3][4][5] Ba 1−x Sr x TiO 3 ͑BST͒, traditionally considered as a superior microwave dielectric material for application in wireless communication, has recently attracted much attention in the optoelectronic community because of its combination of high E-O coefficients, 6,7 high optical clarity, and low optical loss. 8,9 Furthermore, BST thin films have potential to overcome the major drawbacks of currently used E-O ferroelectric materials, such as the high cost and long optical path length of LiNbO 3 and LiTaO 3 single crystals and the environmental burden of lead content in ͑Pb, La͒͑Zr, Ti͒O 3 transparent ceramics and thin films.…”

Epitaxial (Ba,Sr)TiO3 Ferroelectric Thin Films for Integrated Optics

“…The difference in E-O properties in the three kinds of oriented BST films may be attributed to the changes in distribution and magnitude of spontaneous polarization (electric) in orientation engineered films. The polarization changes could originate from: (1) the magnitude variation of the relative displacement of the Ti 4+ with respect to O 2-in the octahedral structure, (2) the change of domain growth mechanism, and (3) the lattice distortion caused by the stain in perovskite structure (Lu et al, 1999;Moon et al, 2003). Other factors, such as dielectric permittivity, may also be responsible for the orientation dependence of E-O effect in our tetragonal-distorted BST thin films (Wan et al, 2004 (Xu, 1991), showing their potential for use in active waveguide applications.…”