Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.
The one-step electrochemical synthesis of H 2 O 2 is an on-site method that reduces dependence on the energy-intensive anthraquinone process. Oxidized carbon materials have proven to be promising catalysts due to their low cost and facile synthetic procedures. However, the nature of the active sites is still controversial, and direct experimental evidence is presently lacking. Here, we activate a carbon material with dangling edge sites and then decorate them with targeted functional groups. We show that quinone-enriched samples exhibit high selectivity and activity with a H 2 O 2 yield ratio of up to 97.8 % at 0.75 V vs. RHE. Using density functional theory calculations, we identify the activity trends of different possible quinone functional groups in the edge and basal plane of the carbon nanostructure and determine the most active motif. Our findings provide guidelines for designing carbon-based catalysts, which have simultaneous high selectivity and activity for H 2 O 2 synthesis.
Recent achievements in semiconductor surface‐enhanced Raman scattering (SERS) substrates have greatly expanded the application of SERS technique in various fields. However, exploring novel ultra‐sensitive semiconductor SERS materials is a high‐priority task. Here, a new semiconductor SERS‐active substrate, Ta
2
O
5
, is developed and an important strategy, the “coupled resonance” effect, is presented, to optimize the SERS performance of semiconductor materials by energy band engineering. The optimized Mo‐doped Ta
2
O
5
substrate exhibits a remarkable SERS sensitivity with an enhancement factor of 2.2 × 10
7
and a very low detection limit of 9 × 10
−9
m
for methyl violet (MV) molecules, demonstrating one of the highest sensitivities among those reported for semiconductor SERS substrates. This remarkable enhancement can be attributed to the synergistic resonance enhancement of three components under 532 nm laser excitation: i) MV molecular resonance, ii) photoinduced charge transfer resonance between MV molecules and Ta
2
O
5
nanorods, and iii) electromagnetic enhancement around the “gap” and “tip” of anisotropic Ta
2
O
5
nanorods. Furthermore, it is discovered that the concomitant photoinduced degradation of the probed molecules in the time‐scale of SERS detection is a non‐negligible factor that limits the SERS performance of semiconductors with photocatalytic activity.
Currently, the performances of thin film solar cells are limited by poor light absorption and carrier collection. In this research, large, broadband, and polarization-insensitive light absorption enhancement was realized via integrating with unique metallic nanogratings. Through simulation, three possible mechanisms were identified to be responsible for such an enormous enhancement. A test for totaling the absorption over the solar spectrum shows an up to approximately 30% broadband absorption enhancement when comparing to bare thin film cells.
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