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By using HfAlO as a capping layer on SiON, MoN/ HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of −0.1 V, and a peak hole mobility of 80 cm 2 /(V · s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 • C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.

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GaN-based LEDs with double nano-pattern were demonstrated. A embeded SiO 2 dielectric photonic quasi-crystal (PQC) with a distance of 1.2 μm below multi-quantum well and NPSS structure improved significantly the performance of LEDs. At a standard driving current of 20 mA for transistor outline-can package, double nano-structure LEDs presented a great light output enhancement of 62% compared to the conventional LEDs.