Efficiency Improvement of GaN-Based LEDs with Double Nano-pattern

Abstract

GaN-based LEDs with double nano-pattern were demonstrated. A embeded SiO 2 dielectric photonic quasi-crystal (PQC) with a distance of 1.2 μm below multi-quantum well and NPSS structure improved significantly the performance of LEDs. At a standard driving current of 20 mA for transistor outline-can package, double nano-structure LEDs presented a great light output enhancement of 62% compared to the conventional LEDs.