Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors

Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

“…[16][17][18][19]. The device using LA has higher I d , one order of magnitude better I ON /I OFF and smaller 106 mV/dec SS than these of control RTA.…”

High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

“…Further V t adjustment to positive can be obtained using higher workfunction gate electrode in the future work. From the following sub-threshold swing (SS) equation, it gives an interface trap density (D it ) of 9.5 Â 10 12 eV À1 cm À2 [25]. The SS is degraded with the relative high D it and the further improvement is required in the future.…”

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

“…Thick high-k dielectrics resulted in still high capacitance values while reducing the gate leakage current. However, with the exceptions of [10], such OTFTs typically exhibited high inverse subthreshold slope [9,11] and low on/off current ratio [8,12].…”