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We have studied the effect of native oxide on thin gate oxide integrity. Much improved leakage current of gate oxide can be obtained by in situ desorbing the native oxide using a HFvapor treated and H 2 backed process. Furthermore, extremely sharp interface between oxide and Si is obtained, and good oxide reliability is achieved even under a high current density stress of 11 A/cm 2 and a large charge injection of 7:9 2 10 4 C/cm 2 . The presence of native oxide will increase the interface roughness, gate oxide leakage current and stress-induced hole trap.

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