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A model is described to simulate expressive wrinkles in 3D facial animation and skin aging. A plastic-visco-elastic skin surface is defined that can slide over an underlying layer. This layer constrains the skin surface by the spring force that simulates the connective fat tissue between skin and muscles. Muscle masks are constructed to characterize the muscular contractions that offer the tension to the skin and provide the facial movement. By choosing proper parameters for this physically based model, wrinkles in facial animation and skin aging are simulated through the elastic process assembled with visco and plastic units.

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This paper describes a dynamic model to simulate expressive wrinkles in 3D facial animation and skin ageing. A skin surface is defined that can slide over an underlying layer, which constrains the surface by a spring force that simulates the connective fat tissue between them. Muscle masks are constructed to characterize the muscular contractions that provide the facial movement. Skin deformation is simulated through an elastic process assembled with visco and plastic units. By adjusting parameters for this physically based model, distinctive wrinkles for different faces can be generated.

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Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.