Articles you may be interested inStructural and magnetic properties of ( Ga , Mn ) As ∕ Al As multiple quantum wells grown by low-temperature molecular beam epitaxyThe structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs͑111͒B and on GaAs͑100͒ substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the ͑100͒ oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples.
Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga 0.92 Mn 0.08 As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 8C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample.
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