Creation of MnAs nanoclusters during processing of GaMnAs

Bak-Misiuk, J.; Domagała, J. Z.; Romanowski, P.; Dynowska, E.; Łusakowska, E.; Misiuk, A.; Paszkowicz, W.; Sadowski, J.; Barcz, A.; Caliebe, W.

doi:10.1016/j.radphyschem.2009.03.083

Cited by 6 publications

(9 citation statements)

References 10 publications

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“…2, may be caused by the higher thermal stability of (Ga,Mn)As with a lower Mn content, or by the contribution of As antisite defects to the (Ga,Mn)As lattice constant, noticeable for Mn contents lower than ∼1%. 25 It was demonstrated previously, 29,30 that strain in the GaAs matrix surrounding (Mn,Ga)As inclusions is larger for zinc-blende clusters than for hexagonal ones. Since the angular positions of the 006 diffraction peaks after annealing at 560 o C, are higher than angular positions of the same peaks after annealing at 630 o C (see Fig.…”

Section: Structural Propertiesmentioning

confidence: 91%

“…[23][24][25][26] After HT annealing, the difference between the lattice constant of the layer originally constituting the (Ga,Mn)As ternary alloy and the lattice constant of the GaAs substrate is due only to strain in the GaAs host lattice caused by the presence of Mn-rich clusters. [27][28][29] The clusters themselves do not contribute to the diffraction peaks shown in Fig. 1.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…It is known from previous reports, that Mn-rich nanocrystals can exert a compressive strain on a surrounding GaAs matrix. [27][28][29] Since the in-plane lattice parameter of the layer is fixed to shows the strain calculated from the lattice constants obtained from angular positions of diffraction peaks shown in Fig. 1.…”

Section: Structural Propertiesmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

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Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

et al. 2011

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corresponding author e-mail: janusz.sadowski@maxlab.lu.se 2 X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate (400 o C) and high temperature (560 and 630 o C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1 and 2%, grown by molecular beam epitaxy at 270 o C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400 o C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7 -10 nm are observed to coexist in layers with an initial Mn content of 0.5% after higher temperature annealing. Measurements of magnetization relaxation in the time span 0.1 -10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.

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Section: Structural Propertiesmentioning

confidence: 91%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

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Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

et al. 2011

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“…As it was stated earlier, not only temperature, but also enhanced hydrostatic pressure (HP) applied during annealing of semiconductors changes di usivity of interstitials Mn in GaMnAs and a ects their structural and magnetic properties considerably [10,11]. In e ect of the HP HT treatment and due to the di erences in compressibility and thermal expansion of primary existing precipitates, some additional defects can nucleate and grow at the existing primary structural irregularities [12].…”

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confidence: 99%

Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

et al. 2012

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Granular GaAs:(Mn,Ga)As lms were prepared by annealing at 500 • C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga1−xMnxAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230 • C by molecular beam epitaxy method. Distinct in uence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to di erent bulk moduli of GaAs and of MnAs

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Transport Properties of Hybrids with Ferromagnetic MnAs Nanoclusters and Their Potential for New Magnetoelectronic Devices

Elm

Hara

2014

Advanced Materials

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Granular hybrid structures containing ferromagnetic nanoclusters embedded in a semiconducting matrix are an interesting class of materials as their properties can be tuned in a wide range. Hybrids are a promising alternative to dilute magnetic semiconductors in the field of spintronics and magnetoelectronics, because the nanoclusters can show ferromagnetic behavior even at room temperature. In this review, it is focused on the rather well investigated dilute magnetic semiconductor (Ga,Mn)As with MnAs inclusions. Different preparation methods are presented which were developed over the last two decades in order to obtain MnAs nanoclusters in the semiconducting matrix and to tune the structural and magnetic properties of these clusters. Recent results on the influence of the nanoclusters on the hybrids' transport properties as well as first approaches to use hybrids with a random nanocluster distribution in new spintronic devices are discussed. In addition, the perspective of using single MnAs nanoclusters as well as ordered arrangements of a few nanoclusters in new planar magnetoelectronic devices is illustrated.

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Creation of MnAs nanoclusters during processing of GaMnAs

Cited by 6 publications

References 10 publications

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

Transport Properties of Hybrids with Ferromagnetic MnAs Nanoclusters and Their Potential for New Magnetoelectronic Devices

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