Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

Kosiel, Kamil; Kubacka-Traczyk, J.; Karbownik, Piotr; Szerling, Anna; Muszalski, J.; Bugajski, M.; Romanowski, P.; Gaca, J.; Wójcik, M.

doi:10.1016/j.mejo.2008.06.091

Cited by 25 publications

(18 citation statements)

References 4 publications

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“…We know by our experience that no GaAs/AlGaAs MIR QCL structure with active region thick− ness inaccuracy bigger than~7% yield lasing devices or at best they lase at temperatures of few tens of degrees lower than for the proper constructions. It is worth mentioning, that our calculations of GaAs−based MIR QCLs show that an active region about 7% thicker than intended, i.e., when all the layers building the active stack are thicker by 7% decreases the separation between pumped level and quasi continuum of states by over 40%, resulting probably in an increased carrier leakage and degradation of laser function [3].…”

Section: Introductionmentioning

confidence: 83%

“…The structures were a 36−period se− quence of injector + 3 QW−active region made of GaAs/ Al 0.45 Ga 0.55 As coupled quantum wells [9]. The calculated lifetime of the excited state and dipole matrix element are t 3 14 = . ps and z 32 = 1.71 nm, respectively [13].…”

Section: Methodsmentioning

confidence: 99%

“…The "burst" mag− nitude is at least few per cent of the stabilized flux value. It must be mentioned here, that the true behaviour of any flux is not clear for at least 20 seconds just after initializing it by opening of the given cell because of inertia of the flux−mea− surement equipment [3]. The "burst" increases with the cell temperature and with the time when the given cell remains closed.…”

Section: Mbe Technologymentioning

confidence: 97%

“…Certainly, it is also because of its advantage of real− −time in situ control tools [11], highly supporting the deve− lopment and long−lasting maintenance of technology of very complicated multilayer heterostructures. There are some reports on the extremely stable performance and pre− dictability of MBE equipment [2]; however, a control over parameters of MBE growth process of such very thick (>10 μm) multilayered structures like QCLs generally still seems to remain not trivial [3].…”

Section: Introductionmentioning

confidence: 99%

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Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers

Kosiel

Kubacka-Traczyk

Sankowska

et al. 2012

Opto-Electronics Review

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In order to adjust the highly controllable and optimum growth conditions, the multi-step interrupted-growth MBE processes were performed to deposit a series of GaAs/Al0.45Ga0.55As QCL structures. The additional calibrations of MBE system were carried out during the designed growth interruptions. This solution was combined with a relatively low growth rate of active region layers, in order to suppress the negative effects of elemental flux instabilities. As a result, the fabricated QCL structures have yielded devices operating with peak optical power of ∼12 mW at room temperature. That is a better result than was obtained for comparable structures deposited with a growth rate kept constant, and with the only initial calibrations performed just before the epitaxy of the overall structure.

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Section: Introductionmentioning

confidence: 83%

Section: Methodsmentioning

confidence: 99%

Section: Mbe Technologymentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers

Kosiel

Kubacka-Traczyk

Sankowska

et al. 2012

Opto-Electronics Review

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“…The electronic band structure of QCL, calculated by solving the Schrödinger equation with position dependent ) GaAs layers. The details of the technology are given in earlier papers [5][6][7]. * effective mass is shown in Fig.1.…”

mentioning

confidence: 99%

Room temperature AlGaAs/GaAs quantum cascade lasers

Bugajski¹

2011

Photon. Lett. Poland

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Abstract-The room temperature (293K), pulsed mode operation of a GaAs-based quantum cascade laser (QCL) is reported. This has been achieved by the use of GaAs/Al 0.45 Ga 0.55 As heterostructure. Its design follows an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE in a Riber Compact 21T reactor. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si 3 N 4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. High operating temperatures have been achieved by careful optimization of growth technology and using metallic high reflectivity facet coating on the back facet of the laser.

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Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green's function modeling of electro-optical characteristics

Bugajski

Gutowski

Karbownik

et al. 2014

Phys. Status Solidi B

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In this paper, we report the results of investigation of 9.5 µm AlGaAs/GaAs and strain compensated 4.7 µm AlInAs/InGaAs/InP QCLs. We also show the results for 9.5 µm lasers based on lattice matched AlInAs/InGaAs/InP structures. The developed GaAs/AlGaAs lasers show the record pulse powers of 6 W at 77 K and up to 50 mW at 300 K. This has been achieved by careful optimization of the MBE growth process and by applying a high reflectivity metallic coating to the back facet of the laser. The 9.5 µm AlInAs/InGaAs/InP lasers utilize AlInAs waveguide and were grown exclusively by MBE without MOCVD regrowth. The short wavelength, strain compensated QCLs were grown by MOCVD. They represent state‐of‐the‐art parameters for the devices of their design. For epitaxial process control, the atomic‐force microscopy (AFM), high resolution X‐ray diffraction (HR‐XRD) and transmission electron microscopy (TEM) were used to characterize the morphological and structural properties of the layers. The basic electro‐optical characterization of the lasers is provided. We also present results of Green's function modeling of mid‐IR QCLs and demonstrate the capability of non‐equilibrium Green's function (NEGF) approach for sophisticated but still computationally effective simulation of laser's characteristics.

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Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures

Cited by 25 publications

References 4 publications

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers

Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers

Room temperature AlGaAs/GaAs quantum cascade lasers

Mid-IR quantum cascade lasers: Device technology and non-equilibrium Green's function modeling of electro-optical characteristics

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