Structural and magnetic properties of the molecular beam epitaxy grown MnSb layers on GaAs substrates

Abstract

Articles you may be interested inStructural and magnetic properties of ( Ga , Mn ) As ∕ Al As multiple quantum wells grown by low-temperature molecular beam epitaxyThe structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs͑111͒B and on GaAs͑100͒ substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the ͑100͒ oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples.

Structural properties of (Ga,Mn)Sb thin films on GaAs(111)A substrate

“…The larger lattice parameter of Mncontaining inclusions than that of pure MnSb is related to formation of (MnGa)Sb; ionic radius of Ga is larger than that of Mn which is substituted. The presence of Ga atoms inside the MnSb increasing the lattice parameters was also detected for MnSb thin layers grown on GaAs(001) substrate [10]. Increase of lattice parameter with increasing Mn concentration is unclear up to now and demands further investigations.…”

Preparation characterization of MnSb–GaAs spin LED

“…1(a) is the epitaxial relation between hexagonal MnSb and cubic GaAs [14,15]. The (10)(11) plane of MnSb lies nearly parallel to the (0 0 1) plane of a GaAs substrate.…”

Growth temperature dependence of MnSb synthesis on GaAs (111) B using molecular beam epitaxy

“…This type of growth was higher in the GT-300, suggesting that excess Sb can be captured and formed MnSb 2 , Mn 2 Sb 3, and/or Sb. 25) All the major features were presented in the figure (Fig. 2) with atomic percentages.…”