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Thin strained Si layers grown on SiGe layers graded to 20% Ge were studied for resistance to relaxation. It was observed that in the presence of ∼105/cm2 threading dislocations from the underlying graded layers, the barrier to misfit dislocation formation is sufficiently reduced to induce relaxation in Si layers even when the layer thickness is less than the predicted critical thickness. Raman spectroscopy revealed that elastic strain accumulation in the uniform SiGe layers is a significant contributor to strain relaxation in the Si cap layers. Upon annealing, thermal mismatch causes the Si layers to relax further, but most of the strain relaxation is accommodated by elastic strain increase in the SiGe layers. This prevents the rampant increase in defect density that would otherwise accompany the strain relaxation. Annealing in an oxidizing ambient appears to pin pre-existing threading dislocations causing nucleation of new threading dislocations and short misfit segments to relieve the thermal mismatch stresses.

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Room temperature synthesis of porous SiO 2 thin films by plasma enhanced chemical vapor deposition Growth and effects of remote-plasma oxidation on thin films of HfO 2 prepared by metal-organic chemical-vapor deposition J.Stability of zirconium silicate films on Si under vacuum and O 2 annealing

Cystic fibrosis (CF) affects more than 30,000 people in the United States and 80,000 people worldwide. This life-threatening genetic disorder causes a buildup of thick, viscous mucus secretions in various organ systems, most commonly the gastrointestinal, pulmonary, and genitourinary systems. This article reviews the clinical manifestations, diagnosis, and monitoring of patients with CF as well as guidelines for management and emerging pharmacologic treatments.

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