Timely and reliable information about crop management, production, and yield is considered of great utility by stakeholders (e.g., national and international authorities, farmers, commercial units, etc.) to ensure food safety and security. By 2050, according to Food and Agriculture Organization (FAO) estimates, around 70% more production of agricultural products will be needed to fulfil the demands of the world population. Likewise, to meet the Sustainable Development Goals (SDGs), especially the second goal of “zero hunger”, potential technologies like remote sensing (RS) need to be efficiently integrated into agriculture. The application of RS is indispensable today for a highly productive and sustainable agriculture. Therefore, the present study draws a general overview of RS technology with a special focus on the principal platforms of this technology, i.e., satellites and remotely piloted aircrafts (RPAs), and the sensors used, in relation to the 5th industrial revolution. Nevertheless, since 1957, RS technology has found applications, through the use of satellite imagery, in agriculture, which was later enriched by the incorporation of remotely piloted aircrafts (RPAs), which is further pushing the boundaries of proficiency through the upgrading of sensors capable of higher spectral, spatial, and temporal resolutions. More prominently, wireless sensor technologies (WST) have streamlined real time information acquisition and programming for respective measures. Improved algorithms and sensors can, not only add significant value to crop data acquisition, but can also devise simulations on yield, harvesting and irrigation periods, metrological data, etc., by making use of cloud computing. The RS technology generates huge sets of data that necessitate the incorporation of artificial intelligence (AI) and big data to extract useful products, thereby augmenting the adeptness and efficiency of agriculture to ensure its sustainability. These technologies have made the orientation of current research towards the estimation of plant physiological traits rather than the structural parameters possible. Futuristic approaches for benefiting from these cutting-edge technologies are discussed in this study. This study can be helpful for researchers, academics, and young students aspiring to play a role in the achievement of sustainable agriculture.

Abstruct-The universal behavior of electron mobility when plotted versus the effective field is physically studied. Due to charged centers in the silicon bulk, the oxide, and the interface, Coulomb scattering is shown to be responsible for the deviation of mobility curves. Silicon bulk-impurities have a double effect: (a) Coulomb scattering due to the charge of these impurities themselves, and (b) reduction of screening caused by the loss of inversion charge when the depletion charge is increased. The electric-field region in which mobility curves behave universally regardless of bulk-impurity concentration, substrate bias, or interface charge has been determined for state-of-the-art MOSFETs. Finally, this study shows that electron mobility must be a function of the inversion and the depletion charges rather than a simple function of the effective field.

The direct and assisted-by-trap elastic tunnel current in metal-oxide-semiconductor capacitors with ultrathin gate oxide ͑1.5-3.6 nm͒ has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.

Abstract-Electron mobility in extremely thin-film siliconon-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si-SiO 2 interfaces is considered. The Boltzmann transport equation is solved by the Monte Carlo method. The contribution of phonon, surface-roughness at both interfaces, and Coulomb scattering has been considered. The mobility decrease that appears experimentally in devices with a silicon film thickness under 20 nm is satisfactorily explained by an increase in phonon scattering as a consequence of the greater confinement of the electrons in the silicon film.

A modified Schrodinger equation has been obtained for calculating the energy -wave-vector dispersion relationship of the two-band Kane model and has been applied to the case of a two-dimensional electron gas. The equation is applicable when the isoenergetic surfaces are not spheres and it is expressed as an infinite series whose summation provides compact solutions. With this equation, the transverse energy levels can be obtained by using an effective mass which is independent of the transverse energy, but there is a dependence of these energy levels on the parallel energy. The boundary conditions associated with the modified Schrodinger equation have been derived by imposing the continuity of the eigenfunction and the probability current, and they have been applied to the calculation of the energy levels in an infinite and a finite square quantum well.