We examined, both experimentally and theoretically, the mobility reduction in metal-insulator-semiconductor field-effect transistors (MISFETs) limited by remote charge scattering. The accuracy of the mobility calculations was confirmed by agreement with experiments on MISFETs with pure SiO2 gate dielectrics, in which mobility is reduced due to scattering from the depletion charges in the polycrystalline silicon gate. In MISFETs with Al2O3∕SiO2 gate stacks, we could not identify the contributions from the remote phonon scattering by using low-temperature measurements of the mobility. The experimental mobility reduction is explained by a model in which both negative and positive charges are located at the Al2O3∕SiO2 interface. According to this model, the mobility increases with the interfacial SiO2 thickness. We confirmed this by fabricating MISFETs with various interfacial SiO2 thicknesses.
Synthesis of a key intermediate of valsartan was accomplished using five parallel monolithic microreactors connected to a split-and-recombine-type flow distributor. The channel resistances of the flow distributor were designed so as to minimize the flow maldistribution among reactors by using pressure drop compartment model, which is analogous to electrical resistance network.
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