This work helps to clarify the effects on bondable Low Temperature Cofiered Cofired Ceramic(LTCC) material from Fraunhofer IKTS under different bonding conditions as changes in temperature, voltage and time. The Paper investigates silicon bonded to LTCC and silicon with a thin aluminum layer bonded to LTCC and compares both with anodic bonding of standard Borofloat 33® from Schott GmbH to silicon. The result of this work provides a comprehensive overview of bonding parameters for the materials Borofloat 33® and LTCC. An inspection of the bonding quality is carried out, which includes the optical inspection of the bonded area and interface observation via a scanning electron microscope (SEM). The bonding quality is also shown with the charge transfer during the bonding process. This paper can be used to achieve a higher degree of freedom in the design of hermetic wafer level packaging for various Micro-Electro-Mechanical System(MEMS)devices made of glass and ceramic materials
A novel approach on wafer-level passivation of power devices using a thin, hermetic borosilicate glass layer as passivation or dielectric layer is presented here. The technology will be benchmarked to those conventional technologies. The glass layer is deposited at low temperatures (T < 100°C) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photo resist process for masking. The process flow is fully compatible with standard CMOS post processing and is integrated in a state-of-the-art production environment. The borosilicate thin-films yield breakdown voltages as high as 250 V/m and a typical specific resistance of 1E17 Ohm/cm at room temperature, a value which is very close to the specific resistance of bulk borosilicate glass. The coefficient of thermal expansion of the borosilicate thin-film (~3 ppm/K) is matched to silicon and enables systems to be reliable at high temperatures or in temperature cycling. Microstr uctured glass films were tested under extreme conditions e.g. up to temperatures as high as 650 °C as well as long-term temperature-humidity storage (85°C, 85% for 8000h). We demonstrate the use of borosilicate thin-films as interdielectric layers in wafer-level redistribution, replacing standard polymers such as BCB or PI as a drop-in solution. Process parameters and reliability results are discussed
A novel process flow to manufacture miniaturized optical windows on wafer-level is presented. Those windows can be used for miniaturized optical products like high-brightness LEDs (HB-LED) and digital projection (DLP) as well as more complex optical data-communication, since integrated optical functions can be implemented with low tolerances. We explain the fabrication of cap-wafers having a shallow cavity with a depth of typically 10m used in photo sensors and a unique manufacturing process for cap-wafers with a deep cavity of e.g. 300m used in LED packaging. Those cap-wafers are used in wafer-level integration of advanced, miniaturized optical products. We discuss two options for wafer bonding i.e. bonding using adhesive as well as anodic bonding. As an example on product level a miniaturized photo sensor package, a pressure sensor package as well as a LED package is discussed
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.