The breakdown voltage of a FET stack is limited by the unequally divided voltage drop among the stacked FETs. A novel stack composed of varying periphery FETs is proposed. Uniform voltage distribution, and thus much higher breakdown voltage, can be achieved by carefully designing the periphery of each FET. A FET stack with varying periphery was designed and fabricated. Significant improvement in breakdown voltage was experimentally confirmed. Unlike the approach of inserting feedforward capacitance, the breakdown voltage increase is achieved without isolation degradation.
Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise model can be attached to any nonlinear signal model to predicate both noise and nonlinear signal responses.
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