Multi-Gate pHEMT Modeling for Switch Applications

A circuit‐based neuro‐space mapping technique for small‐signal modeling of multi‐gate GaN HEMT switches

“…In this way, the proposed circuit‐based neuro‐SM model automatically learns the measurement data of the device without relying on information of the internal structure of the device. Compared to the existing equivalent circuit modeling technique, 9 the proposed technique is, for the first time, to apply neural networks into the small‐signal modeling of multi‐gate GaN HEMT switches. Because of the additional freedom from neural networks, the proposed neuro‐SM model can match device data more accurately than the existing methods for small‐signal modeling of multi‐gate GaN HEMT switches.…”

“…The traditional equivalent circuit modeling methods of single-gate GaN HEMT switches cannot characterize the complex relationships within the multi-gate devices, for example, the coupling effects between each gate and the interaction within the intrinsic region. To solve this problem, equivalent circuit models of multigate GaN HEMT switches have been developed 8,9 by adding more empirical elements such as coupling capacitors between multiple gates to the equivalent circuit model of the single-gate switches. However, the value of these extra elements cannot be directly derived from the measurements, as a consequence, the extraction procedure becomes confused and time consuming and the model accuracy in usually not enough.…”

“…Finally, an accurate model of multi‐gate GaN HEMT switch is achieved and can be used for high‐level circuit design. Compared to existing equivalent circuit modeling technique, 9 the proposed circuit‐based neuro‐SM technique develops more accurate models for the small‐signal modeling of multi‐gate GaN HEMT switches. Application examples on the small‐signal modeling of a dual‐gate GaN HEMT switch and a triple‐gate GaN HEMT switch are used to demonstrate the proposed technique.…”

A low-loss high-linearity SOI SP6T antenna switch using diode biasing method

“…Compared to the positive-intrinsic-negative (PIN) diode [5,6], micro-electro-mechanical systems (MEMS) [7,8], and gallium arsenide (GaAs) psuedomorphic high electron mobility transistor (pHEMT) [9,10], Silicon-oninsulator (SOI) CMOS process shares the important features of being fast, reliable, and highly integratable, and thus, becomes a preferred choice for switch applications [11,12,13,14]. The low break-down voltage and conductive substrate limit the standard bulk CMOS for RF switch applications [15,16,17].…”