Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Zhu, Yu; Wei, Chang; Klimashov, Oleksiy; Li, Binghui; Zhang, C.; Tkachenko, Y.A.

doi:10.1109/emicc.2008.4772288

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…The noise resistance is R n , the noise conductance is G n , the signal source admittance is Y s = G s + jB s , the correlation admittance is Y cor = G cor + jB cor , and the optimum source admittance is Y opt = G opt + jB opt , where G opt and B opt are optimal source conductance and susceptance, 29 respectively, as shown in Figure 13. The NF min can be realised 30 if source admittance is set to G s = G opt and B s = B opt , as indicated in Equation ( 4).…”

Section: Noise Modelling In Vertical Cavet Gan Mis-hemtsmentioning

confidence: 99%

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, vertical CAVET with boron-doped GaN layer as current blocking layer (CBL) for AlGaN/GaN is proposed in this study, and different electrical characteristics of the devices, such as DC (I ds À V ds ), small-signal radio frequency and high-frequency microwave noise performances, are characterised using Synopsys TCAD simulations. The vertical CAVET AlGaN/GaN metal-insulated semiconductor field effect transistor (MIS-HEMT) has been found to have a high threshold V T = 6.36 V, drain saturation current, I ds,sat = 3.41 kA/cm 2 , reduced OFF-state current <10 À12 and improved high frequency and noise performances. The findings provide insight on noise sources and provide information on how to improve GaN transistor noise performance. Its useful characterisation tool for learning more about the imperfections in advanced AlGaN/GaN MIS-HEMTs and how they evolve. A twoport noise equivalent-circuit description is used to calculate data for noise.Using data from noise and scattering parameters that have been measured, we evaluated the effect of noise sources due to gate and drain, as well as their correlation. The devices exhibit a minimum noise figure (NF min ) and an equivalent noise resistance (R n ) of 1.21 dB and 20 Ω at 20 GHz, with V gs = 5 V and V ds = 10 V, which is small and appropriate for low-noise amplifiers with a wide bandwidth. The maximum output power density P out of 23 dBm and the maximum PAE of 63.3% are achieved for GaN V-shaped CAVET MIS-HEMTs with V ds = 10 V at 3.12 GHz is achieved. A comparison is made between the noise performance of conventional HEMTs, MIS-HEMTs and FETs. The methods for obtaining the noise figure (NF min ) and other noise metrics are then explained and compared with those found in the literature.

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Section: Noise Modelling In Vertical Cavet Gan Mis-hemtsmentioning

confidence: 99%

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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show abstract

“…Several efforts have been made to further improve the noise properties of GaN devices by optimising device geometries, including their source-drain spacing [8] and gate width [9], and by using different gate structures [10]. A T-gate structure is generally employed due to its smaller footprint, which reduces gate length and broadens the head, and hence reduces gate resistance.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale material parameters based modeling of thermal noise in GaN HEMTs

Madhulika¹,

Malik²,

Kamboj³

et al. 2020

Semicond. Sci. Technol.

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In this paper, we present an improved analytical model for predicting thermal noise in high-electron-mobility transistors (HEMTs) that considers the material's intrinsic properties at the nanoscale, specifically, its permittivity and melting point. The developed model is validated by comparing the results obtained from the computer simulation with experimental data for different device structures fabricated from an AlGaN/GaN-based two-dimensional electron gas. Furthermore, it is demonstrated that the nanoscale material's structural properties have to be considered to estimate the noise characteristics of the HEMT device accurately.

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Scaleable comprehensive low‐noise PHEMT model that predicts IP3 and noise

Wei¹,

Zhu²,

Klimashov³

et al. 2010

Micro & Optical Tech Letters

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Correlation of IP3 in a phemt with the third derivative of Ids wrt Vgs, or Gm3 is addressed.A nonlinear large‐signal Phemt model was developed based on the fitting RF Gm characteristics as well as IV/CV. Systematic extraction approach is described. In extraction, RF Gm fitting minimizes the errors between modelled and measured Gm3. Scale‐ability in terms of DC, S‐parameters, and IP3 is demonstrated. For large‐size devices, other factors, such as RF‐Gds characteristics, are also important. Modelling of accurate noise response is realized with linear lookup table data based noise model and nonlinear voltage/current sampler. The over‐all model includes also physics‐based dynamic thermal effect and scaleable measurement‐based noise model that makes it the most comprehensive and most practical in industry. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 604–611, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24995

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Gate Width Dependence of Noise Parameters and Scalable Noise Model for HEMTs

Cited by 9 publications

References 7 publications

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Nanoscale material parameters based modeling of thermal noise in GaN HEMTs

Scaleable comprehensive low‐noise PHEMT model that predicts IP3 and noise

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