This paper presents a novel comparator structure based on the common gate differential MOS pair. The proposed comparator has been applied to fully parallel analog to digital converter (A/D converter). Furthermore, this article presents 5 bit fully parallel A/D Converter design using the cadence IC5141 design platform and NCSU(North Carolina State University) design kit with 0.18 µm CMOS technology library. The proposed fully parallel A/D converter consist of resistor array block, comparator block, 1-n decoder block and programmable logic array. The 1-n decoder block includes latch block and thermometer code circuit that is implemented using transmission gate based multiplexer circuit. Thus, sampling frequency and analog bandwidth are increased. The INL and DNL of the proposed fully parallel A/D converter are ( 0/ + 0.63 ) LSB and ( −0.26/ + 0.31 ) LSB at a sampling frequency of 5 GS/s with an input signal of 50 MHz, respectively. The proposed fully parallel A/D Converter consumes 340 mW from 1.8 V supply.
This paper presents a 5-bit flash analog-to-digital converter design using the 0.18-µ m Taiwan Semiconductor Manufacturing Company's CMOS technology library. The designed system consists of 2 main blocks, a comparator array, and a digital decoder. The digital decoder contains a latch, 1-of-N decoder, and fat-tree encoder units. The 1-of-N decoder is implemented using 2 × 1 multiplexers. As a result, the active die area and the power consumption are reduced, in addition to an increase in the sampling frequency. The power supply voltage range for the overall system is ± 0.9 V. For testing purposes, a ramp signal of between -0.45 V and 0.7 V is applied to the converter input. The sampling frequency is 5 Gs/s. The simulation results include a maximum power consumption of 28 mW, integral nonlinearity values of between -0.65 least significant bits (LSB) and + 0.01 LSB, differential nonlinearity values of between -0.3 LSB and + 0.13 LSB, and an active die area of 0.1 mm 2 .
This paper presents design and simulation of a 4-bit 10 GS/s time interleaved ADC in 0.25 micrometer CMOS technology. The designed TI-ADC has 4 channels including 4-bit flash ADC in each channel, in which area and power efficiency are targeted. Therefore, basic standard cell logic gates are preferred. Meanwhile, the aspect ratios in the gate designs are kept as small as possible considering the speed performance. In the literature, design details of the timing control circuits have not been provided, whereas the proposed timing control process is comprehensively explained and design details of the proposed timing control process are clearly presented in this study. The proposed circuits producing consecutive pulses for timing control of the input S/H switches (ie the analog demultiplexer front-end circuitry) and the very fast digital multiplexer unit at the output are the main contributions of this study. The simulation results include +0.26/−0.22 LSB of DNL and +0.01/−0.44 LSB of INL, layout area of 0.27 mm2, and power consumption of 270 mW. The provided power consumption, DNL and INL measures are observed at 100 MHz input with 10 GS/s sampling rate.
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