An a-axis oriented 400 Å YBa2Cu3O7−δ film has been epitaxially deposited on a NdGaO3 (110) substrate by rf magnetron sputtering using a single YBa2Cu5Ox target. An excitation frequency of 94.92 MHz, seven times as high as the conventionally used 13.56 MHz, results in a lower self-bias voltage which reduces degradation of films caused by resputtering due to negatively charged oxygen. Sharp streaks corresponding to the c-axis lattice parameter of YBa2Cu3O7−δ have been observed by reflection high-energy electron diffraction, showing that the c-axis is parallel to the surface of the NdGaO3 substrate and the film surface is smooth on an atomic scale. The crystallinity has been characterized by Rutherford backscattering channeling analysis. A minimum yield, χmin of 3.2%, has confirmed excellent crystallinity of the a-axis oriented film.
The crystal structure and the electrical properties for Aldoped ZnO lms have been investigated with a parameter of a substrate's arrangement in the RF magnetron sputtering system. The samples faced to inside of the target areai040 mmjshows lower conductivity in comparison with samples arranged at outside of the target areai5070 mmj . The electrical properties of the ZnO lms are strongly aected by the damage due to collision of sputtered particles and recoiled Ar ions. The experimental mobility of the samples ar ranged at outside the target areai5070 mmjshows good agreement with the value calculated by the Brooks and Dingle theory assuming that the carrier scattering is mainly originated from the ionized impurities scat tering. Keywords : Zinc oxide, Hall mobility, Carrier concentration, Heavy doping, RF magnetron sputtering
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