Relationship between Crystal Structure and Electrical Properties of Nonuniform Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

Abstract

The crystal structure and the electrical properties for Aldoped ZnO lms have been investigated with a parameter of a substrate's arrangement in the RF magnetron sputtering system. The samples faced to inside of the target areai040 mmjshows lower conductivity in comparison with samples arranged at outside of the target areai5070 mmj . The electrical properties of the ZnO lms are strongly aected by the damage due to collision of sputtered particles and recoiled Ar ions. The experimental mobility of the samples ar ranged at outside the target areai5070 mmjshows good agreement with the value calculated by the Brooks and Dingle theory assuming that the carrier scattering is mainly originated from the ionized impurities scat tering. Keywords : Zinc oxide, Hall mobility, Carrier concentration, Heavy doping, RF magnetron sputtering

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