Target identification is a critical step following the discovery of small molecules that elicit a biological phenotype. The present work seeks to provide an in silico correlate of experimental target fishing technologies in order to rapidly fish out potential targets for compounds on the basis of chemical structure alone. A multiple-category Laplacian-modified naïve Bayesian model was trained on extended-connectivity fingerprints of compounds from 964 target classes in the WOMBAT (World Of Molecular BioAcTivity) chemogenomics database. The model was employed to predict the top three most likely protein targets for all MDDR (MDL Drug Database Report) database compounds. On average, the correct target was found 77% of the time for compounds from 10 MDDR activity classes with known targets. For MDDR compounds annotated with only therapeutic or generic activities such as "antineoplastic", "kinase inhibitor", or "anti-inflammatory", the model was able to systematically deconvolute the generic activities to specific targets associated with the therapeutic effect. Examples of successful deconvolution are given, demonstrating the usefulness of the tool for improving knowledge in chemogenomics databases and for predicting new targets for orphan compounds.

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Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher ft and fmax in high electron mobility transistors (HEMTs). N-polar (0001¯) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

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As a rapidly expanding centre of government, trade, commerce and industry, Delhi, the Indian capital, presents an instructive location for studying the possible association between air pollution and adverse health effects. This study tries to determine the association, if any, between the air pollutants--sulphur dioxide, nitrogen dioxide, carbon monoxide, ozone, suspended particulate matter and respiratory suspended particulate matter--and daily variations in respiratory morbidity in Delhi during the years 2004--2005. Data analysis was based on the Generalized Additive Poisson regression model including a Lowess smoothing function for the entire patient population and subgroups defined by season. The best fitting lag period for each pollutant was found by testing its concentration at varying lags. The model demonstrated associations between daily visits and some of the pollutants (O3, NO2 and RSPM) but their strongest components were observed at varying lags. A single pollutant model showed that a 10 microg m(-3) rise in pollutant level led to statistically significant relative risks (RR): 1.033 for O3, 1.004 for NO2, 1.006 for RSPM. The effect of particulate was relatively low, presumably because unlike other pollutants, particulate matter is not a single pollutant but rather a class of pollutants. This study, continued on a long term basis, can provide guidelines for anticipation/preparedness in the management of health care and hospital admissions.

In this letter, we demonstrate state-of-the-art performance from N-polar GaN/AlGaN metal-insulator-semiconductor high-electron-mobility transistors. Self-aligned gate-first process was used for the fabrication of transistors. Graded InGaN and InN contact layers were used to achieve low ohmic contact resistance. The GaN channel thickness was scaled to 7 nm from previous generation of N-polar GaN devices to improve the aspect ratio and hence achieve better small-signal performance. The devices reported f T of 210 GHz for L G = 30 nm. To further improve the device performance, SiN sidewall spacers were etched and replaced with air gaps resulting in further boost in f T to a state-of-the-art value of 275 GHz.