Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

Nidhi, -; Palacios, Tomás; Chakraborty, Arpan; Keller, S.; Mishra, Umesh K.

doi:10.1109/led.2006.884720

Cited by 54 publications

(33 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-speed operations such as millimetre-wave (30 to 300 GHz) operations can be achieved by reducing the gate length L g to below 100 nm. On the other hand, cryogenic operations can also increase the cutoff frequency f T of HEMTs [3][4][5]. In our previous work [4,5], we measured the DC and RF characteristics of AlGaN/GaN metalinsulator-semiconductor (MIS) HEMTs at 300 and 16 K, and we confirmed that f T and the maximum transconductance g m_max increase with a decrease in temperature.…”

supporting

confidence: 55%

See 1 more Smart Citation

Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

Endoh

Watanabe

Yamashita

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We measured the DC and RF characteristics at 300, 220, 150, 77, and 16 K of AlGaN/GaN metal‐insulator‐semiconductor (MIS) high electron mobility transistors (HEMTs) with SiN/SiO2/SiN triple‐layer insulators. The values of the cutoff frequency fT and the maximum transconductance gm_max increased with a decrease in temperature at relatively high temperatures, i.e. between 150 and 300 K. At temperatures below 100 K, the values of fT and gm_max increased slightly. We also carried out Monte Carlo simulations of electron transport in bulk GaN at various temperatures and electric fields. The steady‐state drift velocity of electrons showed a trend similar to those of the values of fT and gm_max. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

supporting

confidence: 55%

“…In Ref. [3], trends were reported wherein the resistance and charging delay attained near constant values at around 120 K. Thus, the trend of f T with temperature ( Fig. 5) can be explained by considering the trends of τ intrinsic , τ p , and τ cc with temperature in Eq.…”

Section: Resultsmentioning

confidence: 88%

Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

Endoh

Watanabe

Yamashita

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…1,2 The sheet resistance as an important factor limits the high frequency performance of HEMTs by increasing the parasitic access resistance. 3 Many studies have been performed to improve the device performance by reducing the sheet resistance, such as increasing the Al composition of the AlGaN barrier, 4 using AlN/GaN superlattices as a quasi-AlGaN barrier, 5 and replacing the AlGaN by AlInN or AlN as the barrier. 6,7 Among these studies, lattice-matched AlInN barrier is the most promising option to improve the HEMT performance.…”

mentioning

confidence: 99%

High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Zhang

Feng

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

High electron mobility and low sheet resistance were achieved in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel (DC) heterostructure. Two-dimensional electron gas (2DEG) of the DC heterostructure was divided into the double channels and the room-temperature mobility was increased to 1430 cm2/V s by reducing the 2DEG density in each channel, compared with low electron mobility (1090 cm2/V s) for lattice-matched AlInN/AlN/GaN single-channel heterostructure. It was found that the 2DEG mobility was limited by thickness of the AlN interlayer between the double channels. After the structure optimization, the room temperature electron mobility of the DC heterostructure reached 1570 cm2/V s with sheet resistance of 222 Ω/◻.

show abstract

“…As shown in Fig. 3, f T increases ~16% from 300 K to 150 K, and stabilizes down to 100 K. The maximum of f T occurs approximately at the same I D for all temperatures under study [4]. The f max follows a similar evolution than f T , increasing ~21% from 129 GHz at 300 K to 156 GHz at 100 K. Both f T and f max increases are related with the improvement of the parasitic resistances (R S and R D ) as devices are cooled.…”

mentioning

confidence: 65%

“…For high temperatures (HT), Lee and Webb reported a temperature dependent nonlinear model on a 0.35 µm gate length device from 300 K to 423 K [3]. On the other hand, Nidhi has studied the impact of access resistance on HEMTs with high frequency performance for cryogenic temperatures [4]. This work completes the study at low temperatures (LT) by means of extracting the small signal model from 300 K down to 100 K at every 50 K.…”

mentioning

confidence: 74%

Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs

Cuerdo

Pei

Recht

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

A study of the low temperature DC and RF performance of deep submicron AlGaN/GaN high electron mobility transistors (HEMTs) is reported. From 300 K to 100 K both extrinsic transconductance and drain current increase by ∼30%, mainly due to the lowering of the optical phonon scattering that allows higher electron mobility. Source and drain resistances improve too, which contributes to the 15‐20% increase of ft and fmax. The low temperature small signal model has also been extracted accurately at every 50 K. Inductances and capacitances remain constant in the range of temperatures measured. The intrinsic transconductance can be also considered temperature independent, but the output conductance decreases from 300 K to 100 K indicating a better confinement of the 2DEG. The HEMT performance obtained at 100 K can be reached at room temperature by reducing the parasitic resistances and improving the GaN buffer isolation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

Cited by 54 publications

References 15 publications

Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs

Contact Info

Product

Resources

About