High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Zhang, S.; Li, M. C.; Feng, Zhihong; Liu, B.; Yin, Jun; Zhao, Liancheng

doi:10.1063/1.3264961

Cited by 41 publications

(20 citation statements)

References 11 publications

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“…buffer layer, a thin AlN interlayer, and 7-nm InAlN terminal barrier layer [5,6]. The aluminum composition of InAlN layer was characterized by high resolution X-ray diffraction (HR-XRD), and its value was about 83%.…”

Section: Methodsmentioning

confidence: 99%

DC characteristics of large gate periphery InAlN/GaN HEMT on sapphire substrate

Xie

Feng

Zhang

et al. 2011

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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A lattice-matched InAlN/GaN heterostructure was grown on sapphire substrate by using low-pressure metal organic chemical vapor deposition (MOCVD), and Hall effect measurements shown that the sheet charge density and electron mobility were 2.6×10 13 cm -3 and 1210cm 2 /V•s, respectively. Large gate periphery (2.5mm) high electron mobility transistors (HEMTs) with a gate length of 250nm and a source-drain spacing of 4 m were fabricated. The measurement results revealed that the drain current density was 248mA/mm at a gate-source voltage of -1V with a maximum extrinsic transconductance of 271.1mS/mm, and the extrapolated threshold voltage was -1.95V. The measurement of the gate leakage current indicated that the tunneling current is likely the primary mechanism.

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Section: Methodsmentioning

confidence: 99%

DC characteristics of large gate periphery InAlN/GaN HEMT on sapphire substrate

Xie

Feng

Zhang

et al. 2011

2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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“…AlGaN-GaN HEMTs can be used for high-power applications because they produce an intense output density compared with conventional AlGaAs-GaAs HEMTs. [15][16][17] The advantages of nitride semiconductors over other III-V semiconductors are the large band offset between GaN and Al x Ga (1Àx) N, the large LOphonon energy, and the large electron effective mass. All the above-mentioned properties have significant effects on the electronic transport because they shorten the wavelength and relaxation time, which is required for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

Dakhlaoui

2015

Journal of Applied Physics

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Articles you may be interested inInfluence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys. 105, 093109 (2009); 10.1063/1.3124373 Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides J. Appl. Phys. Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys.In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al x Ga (1Àx) N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schr€ odinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red-and blue-shifted through varying the left quantum well width and the aluminum concentration x b2 of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 lm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al y Ga (1Ày) N and by varying the aluminum concentration y Al . The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 lm). V C 2015 AIP Publishing LLC. [http://dx.

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“…Recently, some studies have appeared in the literature. Zhang et al [17,18] reported a double channel (DC) AlInN/GaN heterostructure with high electron mobility and low sheet resistance compared to a single channel (SC). They reported higher RT electron mobility (1570 cm 2 /Vs) along with lower sheet resistance (222 Ω/sq) in AlInN/GaN DC compared to an AlInN/ GaN SC heterostructure [17].…”

Section: Introductionmentioning

confidence: 99%

“…Zhang et al [17,18] reported a double channel (DC) AlInN/GaN heterostructure with high electron mobility and low sheet resistance compared to a single channel (SC). They reported higher RT electron mobility (1570 cm 2 /Vs) along with lower sheet resistance (222 Ω/sq) in AlInN/GaN DC compared to an AlInN/ GaN SC heterostructure [17]. The same group [18] investigated the effect of distance between dual channel (d 1 ) and the thickness of the bottom AlN insert layer (d 2 ) on the transport properties of AlInN/GaN DC HEMTs.…”

Section: Introductionmentioning

confidence: 99%

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

et al. 2014

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One AlInN/AlN/GaN single channel heterostructure sample and four AlInN/AlN/GaN/AlN/GaN double channel heterostructure samples with different values of the second GaN layer were studied. The interface profiles, crystalline qualities, surface morphologies, and dislocation densities of the samples were investigated using high resolution transmission electron microscopy, atomic force microscopy, and high-resolution X-ray diffraction. Some of the data provided by these measurements were used as input parameters in the calculation of the scattering mechanisms that govern the transport properties of the studied samples. Experimental transport data were obtained using temperature dependent Hall effect measurements (10-300 K) at low (0.5 T) and high (8 T) magnetic fields to exclude the bulk transport from the two-dimensional one. The effect of the thickness of the second GaN layer inserted between two AlN barrier layers on mobility and carrier concentrations was analyzed and the dominant scattering mechanisms in the low and high temperature regimes were determined. It was found that Hall mobility increases as the thickness of GaN increases until 5 nm at a low temperature where interface roughness scattering is observed as one of the dominant scattering mechanisms. When GaN thicknesses exceed 5 nm, Hall mobility tends to decrease again due to the population of the second channel in which the interface becomes worse compared to the other one. From these analyses, 5 nm GaN layer thicknesses were found to be the optimum thicknesses required for high electron mobility.

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High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Cited by 41 publications

References 11 publications

DC characteristics of large gate periphery InAlN/GaN HEMT on sapphire substrate

DC characteristics of large gate periphery InAlN/GaN HEMT on sapphire substrate

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure

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