Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

Endoh, Akira; Watanabe, Ichiro; Yamashita, Yoshimi; Mimura, Takashi; Matsui, Toshiaki

doi:10.1002/pssc.200880803

Cited by 7 publications

(5 citation statements)

References 13 publications

(27 reference statements)

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“…Similarly, at 77 K the extrinsic transconductance (g m,ext ) peak showed an increase of about 40% from its RT value and reached 500 mS/mm (Figure 3b). As a matter of fact, the improvement in 2DEG mobility and the decrease in sheet resistance from RT to 77 K, leading to an effective increase of the electron velocity under the gate, results in enhanced DC characteristics at lower operation temperature [14]. Figure 4a,b reveal the current-gain (f T ) and power-gain (f max ) extrinsic cut-off frequencies at RT and 77 K extrapolated from the current gain H21 and the unilateral power gain U at V GS =´3 V and V DS = 8 V, respectively.…”

Section: And Rf Characteristics At Rt and 77kmentioning

confidence: 99%

Section: And Rf Characteristics At Rt and 77kmentioning

confidence: 99%

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InAlGaN/GaN HEMTs at Cryogenic Temperatures

et al. 2016

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Abstract:We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm 2¨V´1¨s´1 combined with a sheet carrier density of 1.93ˆ10 13 cm´2 leading to a remarkably low sheet resistance of 44 Ω/˝are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (f T /f max ) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 µm technology confirmed the outstanding 2DEG properties.

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Section: And Rf Characteristics At Rt and 77kmentioning

confidence: 99%

Section: And Rf Characteristics At Rt and 77kmentioning

confidence: 99%

InAlGaN/GaN HEMTs at Cryogenic Temperatures

et al. 2016

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“…Up to now, the studies of GaN based devices working at low temperature focus on the following aspects: (1) Enhanced transport properties at low temperature due to the weaker phonon scattering [8], [9]; (2) More excellent DC and RF properties at low temperature [10], [11]; (3) The kink effect associated with impact ionization [12]. Most researches have focused on the characterization of the GaN material and devices at low temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Zhu

Hou

et al. 2020

IEEE Access

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The inverse piezoelectric effect and trap effect in GaN HEMTs under the high electric field by reverse-bias step stress at cryogenic temperature (CT, 77K) have been investigated. It is found that the inverse piezoelectric effect is suppressed while the trap effect is enhanced at CT. Due to the lower tensile stress in the as-grown AlGaN barrier at CT, the amplitude of the critical voltage related to inverse piezoelectric effect increases from 75V at 300K to 100V at CT, mitigating the irreversible degradation of the devices. The inverse piezoelectric effect dominates the degradation of reverse gate leakage, which is weakened at CT. However, the devices suffer from more degradation of I d (decreases by 94.38%) and G m,max (decreases by 95.15%) at CT in the dark, induced by the serious trap effect due to the longer emission time. UV-light-assisted stress measurements have been utilized to identify the contribution of the two mechanisms to the degradation of device characteristics at CT. The degradation of I d (G m,max) is only 0.82% (3.31%) for the piezoelectric effect and 93.56% (91.84%) for trap effect at CT, respectively. INDEX TERMS AlGaN/GaN, cryogenic temperature, reverse-bias stress, high electric field, inverse piezoelectric effect, trap, degradation.

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“…Transient pulse analysis on an Al-GaN/GaN HEMT at cryogenic temperature was carried out by Lin et al [10] They observed a more severe current-kink effect at cryogenic temperature than at room temperature due to trap related process and impact ionization. More recently, Endoh et al [11] investigated the DC and RF characteristics of AlGaN/GaN HEMTs at cryogenic temperature. They found that the cutoff frequency and the maximum transconductance increase with decreasing temperature in a range of 150-300 K, and increase slightly as temperature is below 100 K. Al-though some work on cryogenic properties of AlGaN/GaN HEMTs can be found in the literature, few studies involve AlInN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Zhang¹,

Wang²,

Liu³

et al. 2013

Chinese Phys. B

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Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

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Effect of temperature on cryogenic characteristics of AlGaN/GaN MIS‐HEMTs

Cited by 7 publications

References 13 publications

InAlGaN/GaN HEMTs at Cryogenic Temperatures

InAlGaN/GaN HEMTs at Cryogenic Temperatures

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

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