InAlGaN/GaN HEMTs at Cryogenic Temperatures

Abstract

Abstract:We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm 2¨V´1¨s´1 combined with a sheet carrier density of 1.93ˆ10 13 cm´2 leading to a remarkably low sheet resistance of 44 Ω/˝are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (f T /f max ) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 µm technology confirmed the outstanding 2DEG properties.

Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

“…L g =3000nm. It should be mentioned that these mobility values are in good agreement with literature results obtained on GaN HEMTs by Hall effect or transistor parameter extraction [10,22], pointing out the good quality of our GaN/Si technological process. In Fig.…”

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

“…It has been recently shown, that carrying out the metal organic vapour phase epitaxy (MOVPE) in a close coupled shower head reactor leads to unintentional gallium incorporation (Hiroki et al, 2013;Smith et al, 2014;Ben Ammar et al, 2017) and thus the formation of quaternary InAlGaN alloys. These quaternary alloys could exhibit better performances and strain free alloys as one may tune independently the gap and the lattice constant (Kneissl et al, 2006;Dogmus et al, 2016). Therefore, this work is focused on quaternary InAlGaN as its growth is still challenging.…”

Performance Investigation of Power Inverter Components Submersed in Subcooled Liquid Nitrogen for Electric Aircraft

“…Cryogenic power electronics is the next step in the evolution of power electronics technology, enabling higher power density, greater efficiency, and better system performance in several applications [7][8][9][10]. Low-temperature electronics have potential uses in deep space and terrestrial applications, including magnetic levitation transportation systems, military all-electric vehicles, medical diagnostics, cryogenic instrumentation, and superconducting magnetic energy storage systems [11,12].…”