Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Singisetti, Uttam; Wong, Man Hoi; DasGupta, Sandeepan; Nidhi, -; Swenson, Brian L.; Thibeault, B.J.; Speck, James S.; Mishra, Umesh K.

doi:10.1109/led.2010.2090125

Cited by 53 publications

(32 citation statements)

References 15 publications

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“…The transconductance performance of GaN MISFETs obtained in this work was improved compared to those of other reported GaN MISFETs or MIS-HFETs as shown in Fig. 9 [7,8,[23][24][25][26][27][28][29][30]. Although g mmax is not so high as those of GaN MIS-HFETs, which also appear in Fig.…”

Section: Device Structure and Fabrication Processmentioning

confidence: 44%

High performance normally‐off self‐aligned metal gate GaN MISFETs on free‐standing GaN substrates

Ogawa

Kasai

Kaneda

et al. 2014

Phys. Status Solidi C

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This paper describes characteristics of normally‐off mode GaN MISFETs fabricated on free‐standing GaN substrates with high drain current Idss and specific low leakage current between adjacent devices. Nitrogen ion implantation isolation processes were adopted to fabricate isolation regions in self‐aligned GaN MISFETs for the first time. Maximum drain current of 98 mA/mm, maximum trans conductance of 10 mS/mm and threshold voltage of +0.4 V were obtained for the devices. The leakage current between adjacent devices was low, i.e., in the range of 10–6 mA/mm, which is three orders of magnitude lower than those on sapphire substrates. These supreme results indicate a definite availability of normally‐off self‐aligned GaN MISFETs for power switching device applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Device Structure and Fabrication Processmentioning

confidence: 44%

High performance normally‐off self‐aligned metal gate GaN MISFETs on free‐standing GaN substrates

Ogawa

Kasai

Kaneda

et al. 2014

Phys. Status Solidi C

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“…For accurate device simulation, the physical model parameters for transport model are well-matched to the reported measured data [13,18] as shown in Fig. 2 and Fig.…”

Section: Resultsmentioning

confidence: 66%

Optimization of insulated HfO2 dielectrics of GaN/InN/GaN/ In0.1Ga0.9N enhancement mode of MIS-HEMT heterostructure for high frequency power amplifier applications

et al. 2019

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In this paper, the enhancement-mode operation of the hetestructure of GaN/InN/GaN/In0.1Ga0.9N of the Metal Insulator Semiconductor High Electron Mobility Transistor (MIS-HEMTs) device having lnN-channel was investigated. The effect of scaling the device dimensions of Metal Insulator, such as the dielectric thickness of HfO2 and the channel lengths, on the electrical performances was analyzed and compared to the currently used heterostructure. The numerical simulation of synopsis TCAD used showed a significant improvement in the electrical properties of the device that achieved a threshold voltage (VT) = 0.828 maximum drain current of 1.77 A/mm V, transconductance (gm) of 2.29 S.mm −1 , lowest ON-state resistance (RON) of 0.21 Ω.mm, and along with high-frequency performance achieving fT/ fmax of 98 GHz/129 GHz and 200 GHz/ 360 GHz respectively. The simulations also showed that this scaled GaN/InN/GaN/In0.9Al0.1N heterostructure MIS-HEMT is an excellent substitute to the currently used MIS-HEMTs for delivering high power density and frequency at RF/power amplifier applications.

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“…20) The on-resistance (R on ) of the device is 2.6 mm, which is higher than the previously reported R on of the self-aligned E-mode devices. 12) The higher R on could be ascribed to the highly resistive regrowth due to un-optimized growth conditions compared to the previously reported MISFETs. 12) Optimized regrowth conditions will improve the R on of the device.…”

mentioning

confidence: 79%

“…12) The higher R on could be ascribed to the highly resistive regrowth due to un-optimized growth conditions compared to the previously reported MISFETs. 12) Optimized regrowth conditions will improve the R on of the device. Besides the regrowth sheet resistance, the sidewall access resistance is also high on these devices.…”

mentioning

confidence: 79%

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

Singisetti

Wong

DasGupta

et al. 2011

Appl. Phys. Express

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We report the small-signal high-frequency performance of novel enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with a peak short-circuit current gain cutoff frequency (f t) of 120 GHz for a 70-nm gate length device. The device has an 8-nm GaN channel with AlN back barrier and a 5-nm SiN x gate dielectric. These devices show a peak drain current of 0.74 A/mm and peak transconductance of 260 mS/mm at a drain bias of 3.0 V. This is the first demonstration of high-frequency operation of N-polar enhancementmode GaN devices. # 2011 The Japan Society of Applied Physics T here has been increased interest in high-performance enhancement-mode (E-mode) GaN field effect transistors (FETs) for high-frequency, and high-breakdown applications. E-mode devices with good DC characteristics, high short-circuit current gain cutoff frequency (f t) ($112 GHz), and high power gain cutoff frequency (f max) ($215 GHz) 1-6) have been demonstrated. Recently, promising alternative GaN technologies such as InAlN top-barrier, 7) and InGaN back-barrier devices 8) are being investigated to extend the high-frequency operation of GaN devices. N-polar GaN technology, with potential advantages in the carrier confinement in the channel is one such novel technology that is being explored. 9-11) Self-aligned N-polar GaN technology with degenerately doped n þ source/drain regions would reduce the source access resistance. Depletion mode (D-mode) N-polar GaN FETs with self-aligned source/drain, and with a f t of 132 GHz, at a gate length (L g) of 120 nm have been demonstrated. 9) We recently reported self-aligned N-polar E-mode GaN metal-insulatorsemiconductor FETs (MISFETs) with n þ source/drain regrowth, and with a 20-nm GaN channel; where the Emode operation was obtained through the polarization field of a top-AlN electron depleting layer. These devices show a high drain current (I d) of 0.74 A/mm and an extrinsic f t of 18 GHz. 12) However, the devices become D-mode at L g ¼ 0:18 m due to threshold voltage (V th) roll off. In order to obtain high-frequency E-mode operation of the N-polar GaN devices at sub-100-nm gate lengths, the vertical dimensions of the device have to be scaled. In this letter, we report the high-frequency performance of self-aligned E-mode N-polar GaN FETs obtained by simultaneous vertical and lateral scaling of the device, enabling E-mode operation for L g ¼ 70 nm. These devices show a peak I d of 0.74 A/mm and peak transconductance (g m) of 260 mS/mm. A peak f t of 120 GHz was obtained for the L g ¼ 70 nm device. The cross-section schematic and layer structure of the self-aligned device is shown in Fig. 1, where the device structure was vertically scaled by reducing the GaN channel thickness from the previously reported self-aligned N-polar E-mode devices. 12) Devices with an 8-nm GaN channel, with-2 nm AlN back-barrier, and a 2 nm top AlN layer (Fig. 1) were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on a C-face SiC substrate.

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Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

Cited by 53 publications

References 15 publications

High performance normally‐off self‐aligned metal gate GaN MISFETs on free‐standing GaN substrates

High performance normally‐off self‐aligned metal gate GaN MISFETs on free‐standing GaN substrates

Optimization of insulated HfO<sub>2</sub> dielectrics of GaN/InN/GaN/ In<sub>0.1</sub>Ga<sub>0.9</sub>N enhancement mode of MIS-HEMT heterostructure for high frequency power amplifier applications

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

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