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We irradiated Organic Thin-Film Transistors using light sources with peak wavelength in the near-UV spectrum. Organic Thin-Film Transistors have been found very sensitive to near UV rays. Irradiation generates negative trapped charge due to photogeneration, as well as neutral defects, which degrade the mobility and transconductance. We observed noticeable degradation even with 400-nm wavelength, which lies between visible and UV-light. Stronger variations were observed with the shortest wavelength, with a transconductance drop of 85% after 33000-s irradiation with 310 nm UV. We found that the mobility degradation is permanent after storing the devices in vacuum at least for 50 days

We studied the effects of UV irradiation on encapsulated ruthenium-based dye-sensitized solar cell by means of accelerated irradiation stresses. A progressive degradation of open-circuit voltage occurs, while the short-circuit current suddenly drops during stress. The sudden degradation can easily be detected from DC measurements and it occurs when series resistance starts to increase. Electrolyte bleaching is the main effect for cell failure and it induces the degradation of TiO2/Dye/Electrolyte interface as side effect. At the end of the irradiation a complete loss of electrolyte was observed. © 2013 IEEE

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