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Organic field-effect transistors (OFETs) are key enabling devices for plastic electronics technology, which has a potentially disruptive impact on a variety of application fields, such as 2 health, safety and communication. Despite the tremendous advancements in understanding the OFET working mechanisms and device performance, further insight into the complex correlation between the nature of the charge injecting contacts and the electrical characteristics of devices is still necessary. Here, an in-depth study of the metal-organic interfaces that provides a direct correlation to the performance of OFET devices is reported.The combination of synchrotron x-ray spectroscopy, atomic force microscopy, electron microscopy, and theoretical simulations on two selected electron transport organic semiconductors with tailored chemical structures allows to gain insight on the nature of the injecting contacts. This multiple analysis repeated at the different stages of contact formation provides a clear picture on the synergy between organic/metal interactions, interfacial morphology and structural organization of the electrode. The simultaneous synchrotron x-ray experiments and electrical measurements of OFETs in operando uncovers how the nature of the charge injecting contacts has a direct impact on the injection potential of OFETs.

The rise of graphene as an innovative electronic material promoted the study and development of new 2-D materials. Among them, reduced graphene oxide (rGO) appears like an easy and cost-effective solution for the fabrication of thin-film transistors (TFTs). To understand the limits and possible application fields of rGO-based TFTs, a proper estimation of the device parameters is of extreme importance. In this work, liquid-gated ambipolar rGO-TFTs are characterized and a description of their working principle is given. Particular attention is paid toward the importance of the transistors' OFF-state conductivity that was modeled as a resistance connected in parallel with the TFT. Thanks to this model, the main transistor parameters were extrapolated from rGO-TFTs with different levels of electrochemical reduction. The extracted parameters allowed understanding that rGO-TFTs have similar holes and electrons mobilities, and the more pronounced p-type behavior of the devices is due to a positive shift in the p-type and n-type threshold voltages.

I N THE above article [1], an error is present in (1). The correct equation should read as in ( 1), shown at the bottom of the page. This is the equation that was used to extrapolate the fitting parameters reported in Table II and to draw the fitting curve reported in Fig. 6. Therefore, the scientific results and conclusions in the original manuscript do not change.

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