Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays

Gasperin, A.; Wrachien, Nicola; Paccagnella, A.; Ottogalli, F.; Corda, U.; Fuochi, P.G.; Lavalle, Marco

doi:10.1109/tns.2008.920425

Cited by 15 publications

(17 citation statements)

References 21 publications

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“…To date, several works have studied PCMs but only a few works have investigated the effects of irradiation on PCMs [6]- [9] and the interaction of the GST alloys with ionizing particles. Moreover, few works have addressed the effects of irradiation on the circuitry of PCM chips and their consequences.…”

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confidence: 99%

“…Recently, in [9], we presented results on the Total Ionizing Dose (TID) effects on 4-Mbit PCM chips integrated within a standard CMOS technology. PCM cells showed high robustness against TID.…”

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confidence: 99%

“…Second, the effects of heavy-ion irradiation need to be carefully investigated. Finally, while semiconductor companies are working on PCMs with BJT as cell selectors [10], [11], because they may allow more aggressive scaling, previous works [6]- [9] have considered only PCM chips with MOSFET selectors: the radiation response of PCM chips with BJT selectors have not been investigated.…”

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confidence: 99%

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Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Gasperin

Paccagnella

Schwank

et al. 2008

IEEE Trans. Nucl. Sci.

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We study proton and heavy ion irradiation effects on Phase Change Memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation.Index Terms-Chalcogenide material, GST, heavy ions, non-volatile memories, phase change memories (PCM), radiation effects.

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Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Gasperin

Paccagnella

Schwank

et al. 2008

IEEE Trans. Nucl. Sci.

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“…Phase change cells are known to withstand very high doses and sensitivity is not expected to grow with scaling [14]. In principle, charge trapping and interface-state generation in oxides isolating one cell from the other could create leakage current, but this phenomenon is the opposite of what we are actually observing, i.e.…”

Section: Discussionmentioning

confidence: 83%

Heavy-ion induced single event upsets in phase-change memories

Gerardin

Bagatin

Paccagnella

et al. 2014

2014 IEEE International Reliability Physics Symposium

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We study the effects of exposure to accelerated neutron beams of Floating Gate \ud (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts \ud are examined and mechanisms are discussed. A comparison with NAND Flash memories, \ud with both multi-level and single-level cell architecture, is performed. In addition to prompt \ud effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to \ud tail distributions, we can assess possible rare events

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“…From Section VIII-B, it is clear that CBRAM and some metaloxide technologies are robust against ionizing radiation. There is also evidence that phase-change memory is equally robust [233]. This expands potential memristor use in reconfigurable systems to space, as well as to the medical field, where ionizing radiation is used increasingly for sterilization.…”

Section: Discussionmentioning

confidence: 93%

Reconfigurable Memristive Device Technologies

et al. 2015

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In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo–metallic technologies, and we review the most recent advances in oxidebased memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments

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Total Ionizing Dose Effects on 4 Mbit Phase Change Memory Arrays

Cited by 15 publications

References 21 publications

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

Heavy-ion induced single event upsets in phase-change memories

Reconfigurable Memristive Device Technologies

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