We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated
Abstract-We introduce a new hardware/software platform for testing SRAM-based FPGAs under heavy-ion and neutron beams, capable of tracing the bit-flips in the configuration memory back to the physical resources affected in the FPGA. The validation was performed using, for the first time, the neutron source at the RAL-ISIS facility. The ISIS beam features a 1/E spectrum, which is similar to the terrestrial one with an acceleration between 10 7 and 10 8 in the energy range 10-100 MeV. The results gathered on Xilinx SRAM-based FPGAs are discussed in terms of cross section and circuit-level modifications.
In this work we have investigated the effects of irradiation and electrical stress of nanocrystal memory cell arrays. Heavy ion irradiation has no or negligible immediate effects on the nanocrystal MOSFET characteristics, and on the programming window of the cells. By electrically stressing irradiated device, we see accelerated oxide breakdown similar to that previously observed on conventional thin gate oxide MOS capacitors, but no appreciable change of the degradation kinetics in terms of programming window closure and shift. The accelerated breakdown is ascribed to the degradation of the oxide-nitride-oxide (ONO) layer used as control oxide after exposure to ionising irradiation
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