Amorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect were grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. Red, green, blue, and white photoluminescence were observed from the a-Si QD structures by controlling the dot size. An orange light-emitting diode (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on voltage was less than 5 V. An external quantum efficiency of 2×10−3% was also demonstrated. These results show that a LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

Surface acoustic wave ͑SAW͒ devices were fabricated on ZnO thin films deposited on Si substrates. Effects of ZnO film thickness on the wave mode and resonant frequency of the SAWs have been investigated. Rayleigh and Sezawa waves were detected, and their resonant frequencies decrease with increase in film thickness. The Sezawa wave has much higher acoustic velocity and larger signal amplitude than those of Rayleigh mode wave. Acoustic streaming for mixing has been realized in piezoelectric thin film SAWs. The Sezawa wave has a much better efficiency in streaming, and thus is very promising for application in microfluidics.

We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.

An advanced model to explain the current spreading phenomenon of a conventional GaN-based light-emitting diode is presented. For this work, an equivalent circuit, consisting of the two lateral resistance components of the p-transparent electrode and the n-type layer is proposed. Theoretical calculations clearly reveal that the current density crowds near the n or p pads according to the device parameters and has an exponential behavior as a function of the lateral length. Based on these results, appropriate device parameters including the critical transparent-electrode thickness were determined, leading to a perfectly uniform current distribution. It was even possible to demonstrate the ideal device geometry without the need for a transparent electrode such as an interdigitated structure.

We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n-type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%.

The ability to image pressure distribution over complex three-dimensional surfaces would significantly augment the potential applications of electronic skin. However, existing methods show poor spatial and temporal fidelity due to their limited pixel density, low sensitivity, or low conformability. Here, we report an ultraflexible and transparent electroluminescent skin that autonomously displays super-resolution images of pressure distribution in real time. The device comprises a transparent pressure-sensing film with a solution-processable cellulose/ nanowire nanohybrid network featuring ultrahigh sensor sensitivity (>5000 kPa −1 ) and a fast response time (<1 ms), and a quantum dot-based electroluminescent film. The two ultrathin films conform to each contact object and transduce spatial pressure into conductivity distribution in a continuous domain, resulting in super-resolution (>1000 dpi) pressure imaging without the need for pixel structures. Our approach provides a new framework for visualizing accurate stimulus distribution with potential applications in skin prosthesis, robotics, and advanced human-machine interfaces.

In recent years, smart light-emitting-type electronic devices for wearable applications have been required to have flexibility and miniaturization, which limits the use of conventional bulk batteries. Therefore, it is important to develop a self-powered light-emitting system. Our study demonstrates the potential of a new self-powered luminescent textile system that emits light driven by random motions. The device is a ZnS:Cu-based textile motion-driven electroluminescent device (TDEL) fabricated onto the woven fibers of a ZnS:Cuembedded PDMS (polydimethylsiloxane) composite. Triboelectrification, which raises a discontinuous electric field, is generated by the contact separation movement of the friction material. Therefore, light can be generated via triboelectrification by the mechanical deformation of the ZnS:Cu-embedded PDMS composite. This study showed that the TDEL emitted light from the internal triboelectric field during contact and from the external triboelectric field during separation. Light was then emitted twice in a cycle, suggesting that continuous light can be emitted by various movements, which is a key step in developing self-powered systems for wearable applications. Therefore, this technology is a textile motiondriven electroluminescence system based on composite fibers (ZnS:Cu + PDMS) and PTFE fibers, and the proposed selfemitting textile system can be easily fabricated and applied to smart clothes.

Heteroepitaxy of vertically well-aligned ZnO nanowall networks with a honeycomblike pattern on GaN∕c-Al2O3 substrates by the help of a Au catalyst was realized. The ZnO nanowall networks with wall thicknesses of 80–140nm and an average height of about 2μm were grown on a self-formed ZnO thin film during the growth on the GaN∕c-Al2O3 substrates. It was found that both single-crystalline ZnO nanowalls and catalytic Au have an epitaxial relation to the GaN thin film in synchrotron x-ray scattering experiments. Hydrogen-sensing properties of the ZnO nanowall networks have also been investigated.