Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

Kim, Hyunsoo; Park, Seong-Ju; Hwang, Hyunsang; Park, Nae-Man

doi:10.1063/1.1499994

Cited by 79 publications

(65 citation statements)

References 5 publications

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“…ρ n of Si-doped n-type GaN at Si 3×10 18 cm -3 is around 0.03 Ω ․ cm [19], and tn was given as 4×10 -4 cm. Ni and Au thicknesses were commonly 50 Å. ρ t/tt = 25 Ω for the Ni/Au film with a 1:1 thickness ratio when the film thickness is 100 Å in our case, according to the experimental data [16].…”

Section: Device Fabricationmentioning

confidence: 99%

“…In designing an LED device, it is essential to extract the current spreading length from the material and process conditions and to utilize it as a design rule [15][16]. The distance between p-and n-electrodes of the RT-LED was also determined to be shorter than the current spreading length at the material conditions that we employed.…”

Section: Device Fabricationmentioning

confidence: 99%

“…The distance between p-and n-electrodes of the RT-LED was also determined to be shorter than the current spreading length at the material conditions that we employed. The current spreading length is mathematically induced as follows [16]:…”

Section: Device Fabricationmentioning

confidence: 99%

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Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Park¹,

Lee²,

Yang³

et al. 2012

Journal of the Optical Society of Korea

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Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

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Section: Device Fabricationmentioning

confidence: 99%

Section: Device Fabricationmentioning

confidence: 99%

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Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Park¹,

Lee²,

Yang³

et al. 2012

Journal of the Optical Society of Korea

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“…GaN LEDs have a greater efficiency, long lifespan, high reliability, and many environmental benefits [61,62,63]. Recently, GaN LEDs have a great potential in automotive, medical, and display application including indoor, outdoor lighting, and signals.…”

Section: Gan Nanostructured Leds Devicesmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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“…The mechanisms of the efficiency droop in InGaN LEDs have been studied extensively, where carrier delocalization [21][22][23] and electron leakage [18,24] are proposed to be key reasons, while the most recent reports mainly pointing to Auger recombination as the main culprit [25][26][27][28]. Secondly, particularly in the modern high quantum efficiency LEDs, the efficiency droop limitations, current crowding and resistive loss become the most severe bottlenecks for high output power devices, confining their optimal high-efficiency performance at current densities well below 100 A/cm 2 [29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Diffusion-Driven Charge Transport in Light Emitting Devices

Kim¹,

Kivisaari²,

Oksanen³

et al. 2017

Preprint

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Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses which arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto-and microelectronics.

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Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

Cited by 79 publications

References 5 publications

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode

Review of GaN Nanostructured Based Devices

Diffusion-Driven Charge Transport in Light Emitting Devices

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