The I-V characteristics of a p+-n-p+ planar MOS transistor made by the standard technology under the regime of injecting p+-n source-substrate junction without and in the presence of an outer magnetic-field B, which deviates the carriers toward the Si-SiO 2 interface or in the opposite direction, were experimentally investigated. A control by B of the drain-source current IDS was observed. The current I DS and the control of its steepness through the gate bias considerably exceeded the values obtained in the absence of injection. This effect was explained with the increase of the part of the injected current-carriers from the channel at a growing gate bias and with the decrease of the effective distance source-drain. The magnetosensitivity can be connected with the hole current which is controlled by the magnetic-field and sharply increases with the drop of temperature
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