Radiation dosimeter based on floating gate MOS transistor

Kassabov, J.; Nedev, N.; Smirnov, N.

doi:10.1080/10420159108221354

Cited by 28 publications

(15 citation statements)

References 4 publications

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“…These are therefore used as discrete devices or needed to be implemented in custom CMOS process. Alternatively, FGMOS devices have also being explored for various dosimetry applications [15,[63][64][65]. The floating gate (FG) structures can be implemented by connecting the poly-silicon gate of a MOS-capacitor to the gate of sensing MOSFET device in standard CMOS technology [66] as shown in in Figure 6a.…”

Section: Radiation Sensitive Mosfet Devicesmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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Section: Radiation Sensitive Mosfet Devicesmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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“…In a FG MOSFET dosimeter the floating gate is charged before irradiation by electron injection from the control gate [12,13] or substrate [21]. Thus an electric field is created in the oxide layer and that field ensures high dosimeter sensitivity without the application of an external bias during irradiation, which makes the use of FG MOSFET dosimeter convenient.…”

Section: Introductionmentioning

confidence: 99%

“…Two types of MOSFETs are used for detection of ionizing radiation: radiation-sensing field effect transistors (RADFET) [7][8][9][10][11] and floating gate (FG) MOSFETs [12][13][14][15][16]. Normally the RADFET is a p-channel MOS transistor with a SiO 2 gate grown at specific conditions.…”

Section: Introductionmentioning

confidence: 99%

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

et al. 2014

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This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO 2 layer when applying the two-step annealing. Two types of MOS structures with three region gate dielectrics were fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

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“…Two types MOS transistors are used for detecting of ionizing radiation: radiation-sensing field effect transistor (RADFET) (Buehler et al, 1993;Holmes-Siedle&Adams, 1986;Hughes et al, 1988;Price et al, 2004;Ramani et al, 1997;Stanic et al, 2005) and floating gate transistors (Edgecock et al, 2009;Kassabov et al, 1991;McNulty et al, 2006;Scheick et al, 1998Scheick et al, , 1999Tarr et al, 1998Tarr et al, , 2004. Normally the RADFET is a p-channel MOS transistor whose SiO 2 gate is grown at specific conditions and its thickness is around 1 μm (Sarrabayrouse, 1991 ).…”

Section: Introductionmentioning

confidence: 99%

“…The radiation induces changes are irreversible and therefore RADFET dosimeters are for a single use only. At the floating gate dosimeter before irradiation the floating gate is charged by electron injection from the control gate (Kassabov et al, 1991;Tarr et al, 1998) or substrate (Martin et al, 2001) and this creates an electrical field in the oxide layer. Therefore no application of external electric field is necessary during irradiation which makes their application more convenient.…”

Section: Introductionmentioning

confidence: 99%

Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications

Nesheva¹,

Nedev²,

Curiel³

et al. 2012

Quantum Dots - A Variety of New Applications

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Radiation dosimeter based on floating gate MOS transistor

Cited by 28 publications

References 4 publications

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications

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