“…The irradiation-induced effect on the surface roughness is similar to the effect of thermal annealing, but as the electron energy is high bond breaking is probable and may have a contribution in the process of surface smoothing. The irradiation-induced smoothing, in combination with a parallel growth of Si nanoparticles in the SiO x film, can be useful for the potential device applications of these structures …”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…It has been shown that the amount of the pure silicon phase created by the electron irradiation of the SiO x films increases with increasing fluence. Investigations on the response to γ-radiation of MOS structures containing Si nanocrystals have shown that the presence of nanocrystals in the oxide layer ensures high sensitivity and good stability of such sensors/dosimeters . Hence the obtained relation between the electron beam fluence and the amount of the pure Si phase could be useful in the preparation of MOS structures for fast electrons sensing/dosimetry applications.…”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…The irradiation-induced smoothing, in combination with a parallel growth of Si nanoparticles in the SiO x film, can be useful for the potential device applications of these structures. 18 …”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…In recent decades, the growth of semiconductor and metal nanoparticles in a homogeneous oxide film has been studied actively because the presence of nanoparticles makes the composite films suitable for application in various types of more stable and reliable devices, such as third-generation solar cells, MOS-based nonvolatile memories, detectors of ionizing radiation, etc. 18 Therefore, a significant number of studies have been carried out on the radiation-induced nanoparticle growth. Because of the limited length of the mini-review our attention in section 3.1.3 will be mainly focused on the growth of silicon nanoparticles in silicon oxide layers.…”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.
“…The irradiation-induced effect on the surface roughness is similar to the effect of thermal annealing, but as the electron energy is high bond breaking is probable and may have a contribution in the process of surface smoothing. The irradiation-induced smoothing, in combination with a parallel growth of Si nanoparticles in the SiO x film, can be useful for the potential device applications of these structures …”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…It has been shown that the amount of the pure silicon phase created by the electron irradiation of the SiO x films increases with increasing fluence. Investigations on the response to γ-radiation of MOS structures containing Si nanocrystals have shown that the presence of nanocrystals in the oxide layer ensures high sensitivity and good stability of such sensors/dosimeters . Hence the obtained relation between the electron beam fluence and the amount of the pure Si phase could be useful in the preparation of MOS structures for fast electrons sensing/dosimetry applications.…”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…The irradiation-induced smoothing, in combination with a parallel growth of Si nanoparticles in the SiO x film, can be useful for the potential device applications of these structures. 18 …”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
confidence: 99%
“…In recent decades, the growth of semiconductor and metal nanoparticles in a homogeneous oxide film has been studied actively because the presence of nanoparticles makes the composite films suitable for application in various types of more stable and reliable devices, such as third-generation solar cells, MOS-based nonvolatile memories, detectors of ionizing radiation, etc. 18 Therefore, a significant number of studies have been carried out on the radiation-induced nanoparticle growth. Because of the limited length of the mini-review our attention in section 3.1.3 will be mainly focused on the growth of silicon nanoparticles in silicon oxide layers.…”
Section: Electron and Neutron Irradiation Of Amorphous
And Microcryst...mentioning
Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.
“… 5 Inspiration can be derived from work done on Si quantum dot-based solar cells to identify optimum heterojunctions and surface protection mechanisms to improve charge carrier separation and carrier transport. 56 In addition to inorganic heterojunctions fabricated by Lv et al., Si/polymer hybrids can be prepared by covalently linking the water-soluble polymers to Si structures to further improve their stability. 57 , 58 Figure 4 Schematic representation of strategies to improve the stability and activity of Si during photocatalysis …”
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