Polar MOS - A magnetosensitive element

Smirnov, N.; Roumenin, Chavdar; Stoev, I.

doi:10.1016/0250-6874(81)80037-6

Sensors and Actuators

1981

DOI: 10.1016/0250-6874(81)80037-6

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Polar MOS - A magnetosensitive element

N. Smirnov

Chavdar Roumenin

I. Stoev

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1983

1990

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Cited by 5 publications

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“…Of certain interest is also the possibility for forward biasing of the p-n source-substrate junction. An analysis of the electric and galvanomagnetic properties of a technologically standard MOST with injecting source was performed in [4,5], these initial investigations being of phenomenological nature. Similarly, there has been offered a preliminary qualitative model of the total current in the structure, in which two diffusion components Ips and IdifSS are supposed to appear in addition to the channel current If.e.DS.…”

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confidence: 99%

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Magnetic-field effect in MOS transistor with injecting source

Лысенко

Litovskii

Roumenin

et al. 1983

Rev. Phys. Appl. (Paris)

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The I-V characteristics of a p+-n-p+ planar MOS transistor made by the standard technology under the regime of injecting p+-n source-substrate junction without and in the presence of an outer magnetic-field B, which deviates the carriers toward the Si-SiO 2 interface or in the opposite direction, were experimentally investigated. A control by B of the drain-source current IDS was observed. The current I DS and the control of its steepness through the gate bias considerably exceeded the values obtained in the absence of injection. This effect was explained with the increase of the part of the injected current-carriers from the channel at a growing gate bias and with the decrease of the effective distance source-drain. The magnetosensitivity can be connected with the hole current which is controlled by the magnetic-field and sharply increases with the drop of temperature

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“…1), as compared to [1], it is Fig. 5. -Influence of the bias USB on the maximum of the Ips(B) curves at T = 77 K; Ups = -10 V; UGB = -2 V. necessary in (2)-(4) to substitute UDB with (UDS + USB).…”

mentioning

confidence: 99%

Magnetic-field effect in MOS transistor with injecting source

Лысенко

Litovskii

Roumenin

et al. 1983

Rev. Phys. Appl. (Paris)

Self Cite

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show abstract

Integrated silicon magnetic-field sensors

Kordić

1986

Sensors and Actuators

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Bipolar magnetotransistor sensors. An invited review

Roumenin

1990

Sensors and Actuators A: Physical

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Polar MOS - A magnetosensitive element

Cited by 5 publications

References 3 publications

Magnetic-field effect in MOS transistor with injecting source

Magnetic-field effect in MOS transistor with injecting source

Integrated silicon magnetic-field sensors

Bipolar magnetotransistor sensors. An invited review

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