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Strained !nAsisl!n? single quantum wells grown by hydride vapour phase epitaxy have been investigated by photoluminescence. The evolution of the spectra when the temperature is varied above 5 K is analysed in particular. At temperatures larger than -150 K, a signal is generally detected at an energy higher than that of the heavy exciton (e,hh,) peak which is still ObSeNed. It is interpreted as being due to the recombination of conduction band electrons in the InP barriers with heavy holes in the lnAs well (echh,). A value of 0.48 0.02eV is determined for t h e strained valence band offset from the fit of a simple single-band mode! to both the e,hh, and e,hh, transition energies.

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