Photoluminescence studies in strained InAs/InP quantum wells grown by hydride vapour-phase epitaxy

Abstract

Strained !nAsisl!n? single quantum wells grown by hydride vapour phase epitaxy have been investigated by photoluminescence. The evolution of the spectra when the temperature is varied above 5 K is analysed in particular. At temperatures larger than -150 K, a signal is generally detected at an energy higher than that of the heavy exciton (e,hh,) peak which is still ObSeNed. It is interpreted as being due to the recombination of conduction band electrons in the InP barriers with heavy holes in the lnAs well (echh,). A value of 0.48 0.02eV is determined for t h e strained valence band offset from the fit of a simple single-band mode! to both the e,hh, and e,hh, transition energies.

Band parameters for III–V compound semiconductors and their alloys

“…812 Similar offsets were deduced from InAsP/InP quantum well measurements, 573,[813][814][815][816] although a considerably larger VBO was found in one study. 817 An unstrained VBO of 0.39 eV was determined from PL measurements by Disseix et al, 818 Assuming transitivity, the discussion above implies that the VBO for the unstrained GaAs/InP heterojunction should be 0.14 eV, which is roughly consistent with the result of x-ray photoemission spectroscopy ͑0.19 eV͒. 779 With these results in hand, we can calculate VBO bowing parameters for the GaInAs and AlInAs alloys, and find Ϫ0.38 and Ϫ0.64 eV, respectively.…”