Photoluminescence studies of As–P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

Aurand, A.; Leymarie, J.; Vasson, A.; Mesrine, M.; Deparis, C.; Leroux, M.

doi:10.1016/s0040-6090(98)01287-5

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…Such an As/P exchange was observed in the InGaP/GaAs interfaces [6,7] and also in other ones [14,15]. The thickness of a transition layer formed by the process varied with growth conditions.…”

Section: Experiments and Resultsmentioning

confidence: 81%

“…The thickness of a transition layer formed by the process varied with growth conditions. Values between 1 and 2 monolayers (ML) were typical for temperatures close to 560 1C [6,13]. An impact of the As/P exchange process on the InGaPon-AlGaAs interface in sample #803 can be characterized by the formation of an AlGaP or AlGaPAs wide band gap interlayers.…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…Although In 0.485 Ga 0.515 P/ GaAs is an attractive system, it has not met the expectations due to problems linked with the ordering effect [5] and due to problems linked with the complexity of the InGaP/GaAs interface. The former is caused by the self-organisation of Ga and In atoms at the grown surface and the latter by an As/P exchange process [6,7]. The former effect leads to the formation of ordered domains and to a reduction of the band gap and the latter lowers the quality of the InGaP/GaAs interface, which is always worse than the quality of the AlGaAs/GaAs interface despite growth optimisation efforts [16,17].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

AlGaAs/InGaP interfaces in structures prepared by MOVPE

Kúdela

Kučera

Dobročka

et al. 2009

Journal of Crystal Growth

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Section: Experiments and Resultsmentioning

confidence: 81%

Section: Experiments and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlGaAs/InGaP interfaces in structures prepared by MOVPE

Kúdela

Kučera

Dobročka

et al. 2009

Journal of Crystal Growth

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“…28 The substitution of As atoms by P ones at the second interface is dealt with in the following. At the first interface, the As-P exchange is assumed to occur ML after ML as it has been shown in a preceeding work.…”

Section: ͑2͒mentioning

confidence: 99%

Investigation of the P–As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure

Aurand

Leymarie

Vasson

et al. 2001

Journal of Applied Physics

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Photoluminescence microscopy imaging of tensile strained In 1−x Ga x As y P 1−y / InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy Substitution of As atoms by P ones during the growth of GaAs/Ga 0.51 In 0.49 P quantum wells ͑QWs͒ is investigated by photoluminescence ͑PL͒ as a function of temperature and under hydrostatic pressure. We have studied a series of samples, grown by chemical beam epitaxy, in which this substitution is achieved by changing the exposure time of GaAs surface to cracked PH 3 . The emision lines related to the QWs are blueshifted when the time of exposure to PH 3 increases; this is due to the formation of Ga͑As,P͒ monolayers by P-As exchange. Two samples are examined by PL under hydrostatic pressure at 5 K. The ⌫ -X crossover, which corresponds to the transfer of electrons from the ⌫ conduction band states of the QWs to X valley states of the Ga͑As,P͒ interfacial layers occurs at 3.2 GPa for the sample grown with the shortest exposure time ͑5 s͒. In contrast, it occurs at 2.4 GPa for the the sample with the longest exposure time ͑35 s͒. The data obtained by PL under pressure give evidence of the formation of a GaP-rich layer up to 2 monolayers thick at the Ga 0.51 In 0.49 P on GaAs interface. Calculations allow us to estimate the modifications of the P concentration profile among the samples.

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Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Disseix¹,

Payen²,

Leymarie³

et al. 2000

Journal of Applied Physics

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This work reports an extensive optical study of a series of In(As,P)/InP strained quantum wells grown by gas source molecular beam epitaxy with various thicknesses and compositions. Thermally detected optical absorption, reflectance, and photoreflectance measurements have been performed in order to determine all the exciton energies. An envelope function model including band nonparabolicity, intervalence band coupling, and also possible group V element exchange at the interfaces, is used to interpret the experimental data. The fit of the optical transition energies leads to an accurate determination of the crucial structural and optical parameters. The arsenic concentration inside the wells is evaluated and the conduction band offset ratio (Qc=0.70) as well as the bowing parameter of In(As,P) (C=0.14 eV) are determined. These studies also provide useful information about the nanometer-scale P–As interface mixing.

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Photoluminescence studies of As–P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

Cited by 3 publications

References 13 publications

AlGaAs/InGaP interfaces in structures prepared by MOVPE

AlGaAs/InGaP interfaces in structures prepared by MOVPE

Investigation of the P–As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure

Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

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