1998
DOI: 10.1016/s0040-6090(98)01287-5
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Photoluminescence studies of As–P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy

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Cited by 3 publications
(4 citation statements)
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“…Such an As/P exchange was observed in the InGaP/GaAs interfaces [6,7] and also in other ones [14,15]. The thickness of a transition layer formed by the process varied with growth conditions.…”
Section: Experiments and Resultsmentioning
confidence: 81%
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“…Such an As/P exchange was observed in the InGaP/GaAs interfaces [6,7] and also in other ones [14,15]. The thickness of a transition layer formed by the process varied with growth conditions.…”
Section: Experiments and Resultsmentioning
confidence: 81%
“…The thickness of a transition layer formed by the process varied with growth conditions. Values between 1 and 2 monolayers (ML) were typical for temperatures close to 560 1C [6,13]. An impact of the As/P exchange process on the InGaPon-AlGaAs interface in sample #803 can be characterized by the formation of an AlGaP or AlGaPAs wide band gap interlayers.…”
Section: Experiments and Resultsmentioning
confidence: 99%
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“…28 The substitution of As atoms by P ones at the second interface is dealt with in the following. At the first interface, the As-P exchange is assumed to occur ML after ML as it has been shown in a preceeding work.…”
Section: ͑2͒mentioning
confidence: 99%