Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Disseix, P.; Payen, C.; Leymarie, J.; Vasson, A.

doi:10.1063/1.1309050

Cited by 4 publications

(2 citation statements)

References 37 publications

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“…This value is in a good agreement with the 2 ML reduction of the In͑As,P͒/InP quantum well width reported in Ref. 30. The observed difference cannot be due to the different growth rates.…”

Section: -3supporting

confidence: 81%

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Ulloa

Çelebi

Koenraad

et al. 2007

Journal of Applied Physics

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The impact of the capping material on the structural properties of self-assembled InAs quantum dots ͑QDs͒ was studied at the atomic scale by cross-sectional scanning tunneling microscopy. Capping with lattice matched layers and with strained layers was analyzed. When the different capping materials are lattice matched to the substrate, the differences in the QD properties can be dominated by chemical effects: InAs/InP QDs capped with InP have a 2 ML smaller height than those capped with InGaAs or InGaAsP due to As/P exchange induced decomposition. The height of the dots is found to be much more strongly affected when strained capping layers are used. InAs/GaAs, QDs capped with InGaAs are considerably taller than typical GaAs-capped dots. When GaAsSb is used as the capping layer, the dots are almost full pyramids with a height of 9.5 nm, indicating that dot decomposition is almost completely suppressed. This indicates that the dot/capping layer strain plays a major role in inducing dot decomposition during capping.

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Section: -3supporting

confidence: 81%

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Ulloa

Çelebi

Koenraad

et al. 2007

Journal of Applied Physics

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“…This indicates that the height of the dots was reduced by ~2ML due to dot decomposition induced by As/P exchange during InP capping. This value is in good agreement with the 2 ML reduction of the In(As,P)/InP quantum well width reported in [79]. The top facet of the dots capped with InGaAs is less well defined and is more curved than that of the dots capped with InP (compare Figs.…”

Section: Capping With Lattice-matched Layerssupporting

confidence: 91%

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Ulloa

Offermans

Koenraad

2008

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

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Introduction Quantum dot formationSelf-assembled quantum dots (QDs) have attracted much attention in the last years [1,2]. These nanostructures are very interesting from a scientific point of view because they form nearly ideal zero-dimensional systems in which quantum confinement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers [3,4], single electron transistors [5], midinfrared detectors [6,7], single-photon sources [8,9], etc. InAs QDs are commonly created by the Stranski-Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP [10]. Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application.For any application based on InAs QDs, an accurate control of their electronic properties is required. The electron and hole states in the dot are very sensitive to the QD size, shape and composition (as well as to the surrounding material), and therefore an accurate control of the QD structural properties is necessary for applications. This explains the strong effort dedicated in the last years to the structural characterization of QDs [11], which is essential in order to have a deep understanding of the QD formation process. Although a lot of effort has been dedicated to study surface QDs, there are relatively few studies focused on the effect of the capping process [12][13][14][15][16][17][18][19][20]. Some of these studies have already shown significant differences in size, shape and composition between uncapped and capped QDs. For example, an important collapse of the QD height has been reported for InAs/GaAs QDs capped with GaAs [14,15,[17][18][19], revealing the big influence of the capping process on the structural properties of the QDs. Indeed, critical issues affecting the dot take place during capping like dot decomposition, intermixing, segregation, As/P exchange and composition modulation in the capping layer. This means that the real buried QDs must be studied in order to understand the complete QD formation process. Cross-sectional scanning tunnelling microscopy is an especially useful technique for this purpose, because it allows the structure of the capped dots at the atomic scale to be assessed. Cross-sectional scanning tunnelling microscopy (X-STM)The scanning tunnelling microscope is part of the family of scanning probe microscopes, which are able to provide direct real space information of a physical property at the atomic scale. This

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Photovoltaics literature survey (no. 6)

Keevers

2001

Progress in Photovoltaics

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In order to help keep readers up‐to‐date in the field each issue of Progress in Photovoltaics will contain a list of recently published journal articles most relevant to its aims and scope. This list is drawn primarily from recent issues of IEEE Transactions on Electron Devices, Journal of Applied Physics, Progress in Photovoltaics, Solar Energy and Solar Energy Materials and Solar Cells, with additional journals surveyed if space permits. To assist the reader, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Mark Keevers at m.keevers@unsw.edu.au Copyright © 2001 John Wiley & Sons, Ltd.

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Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy

Cited by 4 publications

References 37 publications

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Photovoltaics literature survey (no. 6)

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