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The impact of the capping material on the structural properties of self-assembled InAs quantum dots ͑QDs͒ was studied at the atomic scale by cross-sectional scanning tunneling microscopy. Capping with lattice matched layers and with strained layers was analyzed. When the different capping materials are lattice matched to the substrate, the differences in the QD properties can be dominated by chemical effects: InAs/InP QDs capped with InP have a 2 ML smaller height than those capped with InGaAs or InGaAsP due to As/P exchange induced decomposition. The height of the dots is found to be much more strongly affected when strained capping layers are used. InAs/GaAs, QDs capped with InGaAs are considerably taller than typical GaAs-capped dots. When GaAsSb is used as the capping layer, the dots are almost full pyramids with a height of 9.5 nm, indicating that dot decomposition is almost completely suppressed. This indicates that the dot/capping layer strain plays a major role in inducing dot decomposition during capping.

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Cross-sectional scanning tunneling microscopy was used to study at the atomic scale the impact of the capping material on the structural properties of self-assembled InAs quantum dots (QDs) grown on a high index (311)B InP substrate. Important differences were found in the capping process when InP or lattice matched InGaAs(P) alloys are used. The QDs capped with InP have a smaller height due to As∕P exchange induced decomposition. This effect is not present when InGaAs is used as the capping material. However, in this case a strong strain driven phase separation appears, creating In rich regions above the QDs and degrading the dot/capping layer interface. If the InAs dots are capped by the quaternary alloy InGaAsP the phase separation is much weaker as compared to capping with InGaAs and well defined interfaces are obtained.

Bu çalışmada, birkaç grafen tabakasından oluşan, 100 nm'nin altında kalınlığa ve olağanüstü mekanik özelliklere sahip grafen nanolevhaların (GNL) endüstride sıkça kullanılan AlSi10Mg alaşımına katkısının mikroyapı ve mekanik özellikler üzerine etkisi incelenmiştir. Büyük yüzey alanı ve sahip oldukları yüksek yüzey enerjileri nedeniyle GNL'ların sıvı metaller içinde homojen olarak dağıtılması güçtür. GNL'ların sıvı alüminyum alaşımına geçişi yarı-katı mekanik karıştırma ile matris içinde dağılımı ise ultrasonik proses ile gerçekleştirilmiştir. Dökülen kompozitlerin yapılan mikroyapı analizleri sonucunda, yüksek yoğunluktaki ultrasonik dalgalar ile GNL'ların aglomerasyonlarının önlenerek matris içinde göreceli olarak homojen dağıldığı ve matris-GNL'lar arasında iyi bir tutunma yüzeyinin elde edildiği gösterilmiştir. Gerçekleştirilen çekme deneylerinde, ağırlıkça %0.25 GNL takviyesinin alaşımın mukavemetini önemli oranda arttırdığı tespit edilmiştir. Mukavemetteki iyileşme ağırlıklı olarak GNL'ların dislokasyonların ilerlemesinde bariyer vazifesi görmesine dayandırılmaktadır. Bu sonuçlar GNL takviyeli yüksek performanslı metal matrisli nanokompozitlerin seri imalata uygun olarak sıvı fazda üretilebilirliklerini göstermektedir.

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